Edge bead removal gap gauge

5444921
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Inventors

Milina, Daniel V.

Application #

190420

Filed

Feb-2-1994

Published

Aug-29-1995

Current US Class

033/567
033/613
033/833

International Classes

G01B 005/14; G01B 003/30

Field of Search

33/832 33/833 33/626 33/642 33/613 33/567 33/567.1 33/571 33/792 33/501.08 33/562 437/231 134/33

Assignee

VLSI Technology, Inc. (San Jose, CA)

Examiners

Wirthlin; Alvin

Attorney, Agent or Firm

King; Patrick T.

US Patent References

4439243   Apparatus and met...
4439244   Apparatus and met...
4685975   Method for edge cl...

Referenced by:

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Citation

Cite This Patent

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Abstract
An apparatus and method for determining the distance of a semiconductor wafer from a nozzle of an edge bead removal system. A rotationally adjustable gap gauge is placed over a vacuum chuck of an edge bead removal system. The gap gauge has a ramped surface which is located proximate to the nozzle when the gap gauge is placed over the vacuum chuck. By rotating the gap gauge on the vacuum chuck, the ramped surface is brought closer to the nozzle. When the nozzle contacts the ramped surface, the position of the gap gauge, as shown by calibration marks on the gap gauge, are recorded. The calibration marks on the gap gauge indicate the corresponding distance that will exist between the nozzle and the backside of a semiconductor wafer when the gap gauge is removed and a semiconductor wafer is placed onto the vacuum chuck. The edge bead removal system is then adjusted such that a desired distance will exist between the nozzle and a semiconductor wafer when a semiconductor wafer is placed onto the vacuum chuck. In so doing, the present claimed invention provides for uniform quantitative measurement of the gap distance between a nozzle and the backside of a semiconductor wafer in an edge bead removal system.
 
Claims
I claim:

1. An apparatus for determining the distance of a semiconductor wafer from an edge bead removal nozzle comprising:

a rotationally adjustable gap gauge having a top and bottom surface, said gap gauge further comprised of;

a circular recessed area centrally located within said bottom surface of said gap gauge, said circular recessed area extending a first distance into said bottom surface of said gap gauge to a planar surface disposed within said bottom surface of said gap gauge, and

a ramped surface disposed on said bottom surface of said gap gauge peripherally surrounding said circular recessed area, said ramped surface having a first end and a second end, said first end of said ramped surface positioned flush with said bottom surface of said gap gauge, said second end of said ramped surface extending into said bottom surface of said gap gauge such that said second end is flush with said planar surface, said ramped surface disposed making a single revolution around said circular recessed area, said ramped surface configured such that the distance which said ramped surface extends into said bottom surface of said gap gauge towards said planar surface varies with the position of said ramped surface around said circular recessed area.



Description
BACKGROUND OF THE INVENTION

1. Field of the Invention

The present claimed invention relates to the field of semiconductor wafer fabrication. More specifically, the present claimed invention relates to the measurement of the distance from the backside of a semiconductor wafer to a nozzle of an edge bead removal system.

2. Prior Art

During conventional applications of photoresist coatings to semiconductor wafers, a "coater" system is used. One part of the coater system is a flat, circular, disk-shaped, rotating vacuum chuck having a diameter slightly less than that of a semiconductor wafer. The vacuum chuck is used to hold and rotate a semiconductor wafer during the photoresist application process. The vacuum chuck is oriented such that a semiconductor wafer placed thereon resides in a level horizontal plane. In operation, the backside or inactive surface of a semiconductor wafer is placed onto the vacuum chuck. The vacuum chuck applies a suction or negative pressure to the backside of the semiconductor wafer to hold the semiconductor wafer on the vacuum chuck.
 
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