GAS OR VAPOR DEPOSITION

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This subclass is indented under the class definition.  Apparatus wherein a coating material which is in the form of either the third state of matter, i.e., gaseous, or the transition between the second and third states of matter, i.e., vaporous, is condensed upon and forms a deposit of a base.
(1) Note. The mere atomization of a liquid coating material by the influx of a pressurized gas thereby forming a fine mist is not included here. See Class 118, subclasses 300+.

SEE OR SEARCH CLASS:

117, Single-Crystal, Oriented-Crystal, and Epitaxy Growth Processes; Non-Coating Apparatus Therefor,   for processes and non-coating apparatus for growing therein-defined single-crystal of all types of materials, including inorganic or organic, especially subclasses 84+ for processes of vapor phase epitaxy corresponding to the vapor phase epitaxy apparatus found in Class 118.


 
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Patent Number
Title
  Date
3936539 High temperature resistant diffusion coating Feb-3-1976
Dispersion-strengthened nickel and nichrome protected by an aluminum diffusion coating over a chromium diffusion coating, have their resistance to oxidation at extremely high temperatures increased by including cobalt with the chromium diffusion coating. Aluminum diffusion can be effected with an energizer...     
4000335 Method of making photocathodes Dec-28-1976
A method is provided for making photocathodes which uses a stainless steel igh-vacuum, or ultrahigh vacuum, manifold fitted with side-tubulations and appertenances, and having interior surfaces that are coated or plated with a noble metal or semi-noble metal layer, in order to assure most extreme cleanliness...     
4037945 Indirect reflective window Jul-26-1977
A reflective window for providing an indirect optical path to an object including an array having a plurality of reflective elements, each being disposed at an acute angle to the plane of the window and parallel to each of the other reflective elements; each of the reflective elements having a length,...     
4062318 Apparatus for chemical vapor deposition Dec-13-1977
An apparatus for chemically vapor-depositing a material onto surfaces of a plurality of substrates within a reaction chamber comprises means positioned within the chamber for supporting the substrates in a stack-like relationship wherein the surfaces are substantially parallel to each other and are separated...     
4108106 Cross-flow reactor Aug-22-1978
A cross-flow reactor for single pass reaction of a plurality of semiconductor wafers with process gas at spaced locations within a heated reactor chamber. The process gas flows along a heated length of the chamber, counterflows to at least three spaced locations within the chamber, traverses the longitudinal...     
4116161 Dual tumbling barrel plating apparatus Sep-26-1978
An apparatus for plating work pieces including irregularly-shaped workpieces of various sizes with a technique known as ion vapor deposition wherein the articles are tumbled in adjacent counter-rotating barrels, a portion of which are cathodes of a high voltage system. The barrels rotate about generally...     
4154192 Manufacturing apparatus for semiconductor devices May-15-1979
An oxidizing tube encircled by an electric heater is disposed within a pressure envelope. A high pressure inert gas is supplied to the envelope and tube while hydrogen and oxygen are supplied to the tube while being kept at an elevated temperature to react with each other to form steam. The steam oxidizes...     
4188908 Novel microscope slide smoker Feb-19-1980
A microscope slide smoker device for providing a layer of smoke reactant to laboratory microscope slide comprising a base section having a flat upper surface with a rectangular aperture therein, fixture means mounted on said base at the shorter ends of said aperture for holding, aligning and smoking...     
4205623 Vacuum deposition apparatus Jun-3-1980
A thin-film deposition apparatus comprises a cabinet having a vessel mounted therein which defines a vacuum chamber adapted to retain processed articles. A vacuum unit is mounted in the cabinet to communicate with an opening defined in the vacuum chamber whereby the chamber may be evacuated upon actuation...     
4221682 Tetrapeptides having analgesic activity Sep-9-1980
The polypeptides of the formula: ##STR1## wherein R.sub.1 is hydrogen or lower alkyl; R.sub.2 is hydrogen, lower alkyl, allyl, 2-methylpropenyl, cyclopropylmethyl or cyclobutylmethyl; R.sub.3 is hydrogen or lower alkyl; and R.sub.4 is hydrogen, lower alkyl or hydroxy lower alkyl; the monomeric precursors...     
4315479 Silicon wafer steam oxidizing apparatus Feb-16-1982
A high-pressure, high-temperature gaseous chemical apparatus particularly designed for oxidation of silicon wafers and providing for pressure equalization across the wall of the vessel providing the reaction chamber, for a water boiling enclosure within the reaction chamber and the injection of liquid...     
4328763 Vaporizer for vacuum deposition installations May-11-1982
A vaporizer for vacuum deposition installations has at least one crucible and a plurality of crucible-receiving recesses movable into a vaporizing position, a vapor-conducting device and a shutter for interrupting the flow of vapor. The vaporizer is capable of enabling a plurality of different substances...     
4362125 Quartz oscillator measuring head Dec-7-1982
An oscillator crystal measuring head is disclosed, for vacuum coating apparatus, intended for measuring the mass of substance which is deposited on an oscillator crystal during a deposition of thin layers, and by which the frequency of the crystal is changed. To obtain a longer, continuous measuring...     
4369730 Cathode for generating a plasma Jan-25-1983
A cathode for use in a glow discharge chamber. A top surface electrode is adapted to provide a substantially uniform distribution of reaction gases at the active surface of an overlying substrate as it advances through the chamber. A plurality of baffles within the cathode creates equal path lengths...     
4411733 SPER Device for material working Oct-25-1983
A segmented plasma excitation and recombination (SPER) device is employed in a deposition scheme in which the plasma generated in the gap between adjacent electrodes is formed into a beam of ions/atoms by flowing a background gas through the gap. The beam strikes a workpiece and deposits a layer of the...     
4497277 Bell of opaque fused silica Feb-5-1985
A bell made of opaque fused silica and intended for use in the deposition of polycrystalline silicon is assembled from at least three individual sections. The sections are joined to one another at end flanges with gaskets between the flanges. The lengths of the individual sections are determined by the...     
4499853 Distributor tube for CVD reactor Feb-19-1985
An apparatus for chemically vapor-depositing silicon material on surfaces of a plurality of substrates arranged in a stack that is continuously rotating. A gas distributor formed of a pair of coaxially tubes, in fixed relation with the rotating substrates, provides a pair of gas streams from a pair of...     
4545801 Raw material supply device Oct-8-1985
A device is disclosed for supplying a glass raw material gas in the form of the mixed gas consisting of the glass raw material gas and the carrier gas to a vapor deposition device for producing a preform of an optical fiber, the supply device including a secondary raw material container having a pressurizable...     
4547248 Automatic shutoff valve Oct-15-1985
A plasma reactor system is described in which modularity is enhanced through automatic shutoff valves for gas lines, enabling components to be exchanged readily. Gas lines are routed through a connector at a predetermined location for all modules. The connector comprises a valve member for each line.
4573431 Modular V-CVD diffusion furnace Mar-4-1986
A novel modular V-CVD diffusion furnace includes a cylindrical quartz diffusion tube having integral end flanges, a first metallic sealing plate having gas ports removably fastened to one flange, a second metallic sealing plate having a plurality of precisely aligned gas injection tube receiving apertures...     
4608117 Maskless growth of patterned films Aug-26-1986
A method of growing patterned films on a substrate in a deposition chamber without masking, the method consisting of the following steps: pressurizing the chamber with a fluid medium to form a thin absorption layer on the substrate; evacuating the chamber to remove excess fluid medium; prenucleating...     
4609424 Plasma enhanced deposition of semiconductors Sep-2-1986
Semiconductor thin films are produced using plasma assisted chemical vapor deposition on alkali halide single crystal substrates. Deposition is formed at relatively low temperatures so that sublimation of the substrate is not a problem. The invention process permits at high rate deposition of high quality...     
4641603 Epitaxial growing apparatus Feb-10-1987
An epitaxial growing apparatus comprises a base plate, a quartz bell jar mounted on the base plate, and a reaction chamber defined by the base plate and the quartz bell jar, in which an epitaxial thin film layer of a semiconductor substance is formed on the substrate mounted on a support member. A metal...     
4648347 Vacuum depositing apparatus Mar-10-1987
In vacuum depositing apparatus, especially for the manufacture of magnetic tapes, a substrate holder is disposed in the form of a cooling cylinder, and in the path of the vapor stream there is a mask for the purpose of geometrically restricting the vapor stream. In order to prevent any condensation of...     
4651673 CVD apparatus Mar-24-1987
A chemical vapor deposition epitaxial reactor (10) comprised of a quartz tube (12) with banks of IR lamp proximate the outside surface thereof. A splitter plate (30) located at the inlet of the tube (12) separates reactive gases and nonreactive gases directed longitudinally into the tube. The nonreactive...     
4664890 Glow-discharge decomposition apparatus May-12-1987
A glow-discharge decomposition apparatus comprises ground electrodes, substrates, RF-electrodes, a RF-power supply, a matching circuit and a controlling circuit having at least one electric element. Each of the substrates is provided on the ground electrodes which are placed over each of the RF-electrodes...     
4668479 Plasma processing apparatus May-26-1987
The present invention relates to a plasma processing apparatus comprising a housing chamber which accommodates substances to be painted made of synthetic resin, a rotating support base which is provided in the housing chamber and rotates the substance to be painted, a plurality of hangers which are placed...     
4669418 Optical coating apparatus Jun-2-1987
Apparatus for evaporating numerous layers of various substances upon a substrate includes square witness chips transparent to a specific beam of radiation. A witness chip holder, having a cylindrical base, has an axial hole vertically disposed from its central axis. The axial hole has a cross-sectional...     
4683838 Plasma treatment system Aug-4-1987
An insulator film can be formed at a low temperature without any damage to a substrate to be treated by a plasma in a plasma treatment system which comprises a magnetron for generating a microwave, an isolator for isolating a wave guide from the magnetron, a discharge tube for generating a plasma, the...     
4699085 Chemical beam epitaxy system Oct-13-1987
A chemical beam epitaxy system including a cylindrical vacuum chamber (32) with wafer heaters (42) affixed about the cylindrical wall, a rotatable wafer holder ring (40) with mounted wafer holders (38) adjacent the wafer heaters (42), and a central rotatble set of gas cells (44) for directing chemical...     
4711197 Gas scavenger Dec-8-1987
A gas scavenger unit educts gases away from semiconductor wafers as they are withdrawn through a plenum in the scavenger from their processing chamber into the atmosphere. The scavenger has a peripheral wall which generally defines a plenum having two open ends. The one end of the plenum communicates...     
4725204 Vacuum manifold pumping system Feb-16-1988
Vacuum pumping system comprises a plurality of vacuum processing vessels, semiconductor processing reactors, and the like, connected to a common manifold evacuated by a generously large central vacuum unit. The manifold is maintained at a substantially constant designated pre-set pressure higher than...     
4726320 Laser CVD device Feb-23-1988
In a laser CVD device, immediately before being emitted from a nozzle, raw gas in a reaction chamber reacts opto-chemically with a focused laser beam so that it is decomposed to form a radical flow. The radical flow flows against a substrate set in the reaction chamber so that active materials produced...     
4733631 Apparatus for coating substrate devices Mar-29-1988
The present apparatus has a movable table with apertures therein. In each aperture there is loaded a carrier device and each carrier holds a substrate to be coated. The carriers are advanced in a step-like fashion to a loading position under a vertical hollow cylinder. When a carrier is in the loading...     
4753192 Movable core fast cool-down furnace Jun-28-1988
One fast cool-down furnace embodiment discloses a double wall in the interspace of which a cooling air stream is flowable to provide fast cool-down of a load of wafers. The double wall embodiment is retrofittable on existing diffusion furnace, and includes a cylindrical member aligned in concentric relation...     
4761171 Apparatus for coating glass Aug-2-1988
A gas distributor beam includes a plenum and distribution slot surrounded by a generally V-shaped cooling fluid chamber. The circulation of a suitable cooling fluid tends to maintain the plenum and distribution slot at a temperature below four hundred degrees Fahrenheit for the distribution of diborane...     
4767641 Plasma treatment apparatus Aug-30-1988
Device for the plasma treatment of substrates (7) in a high frequency-excited plasma discharge between two electrodes (3, 8), supplied by a high-frequency source (6). The first electrode is constructed as a hollow anode (3) and the second electrode (8), which carries the substrate (7), is deposited in...     
4770121 Semiconductor vapor phase growing apparatus Sep-13-1988
An apparatus for positioning a plurality of semiconductor substrates on a movable, support in a desired pattern, in a semiconductor vapor phase growing apparatus. A memory is provided for storing two dimensional data corresponding to the desired pattern. The desired pattern is predetermined by the sizes...     
4807562 Reactor for heating semiconductor substrates Feb-28-1989
A chemical vapor deposition (CVD) reactor includes a vertically mounted multi-sided susceptor with means to adjust the gas flow across the width of each susceptor face. Gas can be fed thru the inside of the susceptor to various distribution devices positioned inside or above the susceptor. A pyrolytic...     
4817558 Thin-film depositing apparatus Apr-4-1989
A thin-film depositing apparatus which includes a reaction container adapted to receive a material gas therein, for a thin-film depositing reaction, a substrate supporting member located in a predetermined position in the reaction container in order to set a substrate on which a thin film is to be deposited,...     
4825808 Substrate processing apparatus May-2-1989
A substrate processing apparatus includes input and output chambers for loading and unloading substrates into and out of the apparatus, a separation chamber connected to the input and output chambers, a plurality of substrate processing chambers connected to the separation chamber for processing the...     
4828224 Chemical vapor deposition system May-9-1989
This invention discloses a system for chemically depositing various materials carried by a reactant gas onto substrates for manufacturing semiconductor devices. The system includes special loading and unloading sub-system for placement of substrates to be processed into the system and subsequent extraction...     
4834023 Apparatus for forming deposited film May-30-1989
An apparatus for forming a deposited film by bringing gaseous starting materials for forming deposited film contact with a gaseous halogenic oxidizing agent which exerts oxidative effect on the starting materials, comprises, in a chamber for forming the deposited film, gas discharge means comprised of...     
4836140 Photo-CVD apparatus Jun-6-1989
A photo-CVD (chemical vapor deposition) apparatus is disclosed, in which at least two light transmission plates are used and the light from a light source is introduced into a gas reaction chamber through one of light transmission plates inserted into the chamber to cause the reactions in a reaction...     
4846102 Reaction chambers for CVD systems Jul-11-1989
An improved reaction chamber for use in an epitaxial deposition process for processing a single wafer-at-a-time includes a cold-wall reactor having a substantially rectangular cross-section. The cross-sectional area of the reaction chamber is substantially reduced to increase the efficiency of the system....     
4847469 Controlled flow vaporizer Jul-11-1989
A vaporizing apparatus delivers precisely controlled, substantially continuous and monitored vapor flows for uses such as in plasma enhanced vapor deposition. The vaporizing apparatus includes a fluid passageway along which are a pumping device, a vaporizing device, and a flowing device, all in fluid...     
4880495 Regeneration of copper etch bath Nov-14-1989
This invention relates to a copper etching process which involves contacting the copper with an aqueous etching solution comprising sulfuric acid and a peroxide to which is added less than about 0.2% of an organic additive useful as a crystallization control agent and selected from the group consisting...     
4887548 Thin film manufacturing system Dec-19-1989
A thin film manufacturing system comprises a reaction vessel with a window that is transparent to ultraviolet radiation; a means of exhausting gas from the reaction vessel to a reduced pressure condition, a means of introducing a gas into the reaction vessel to form a thin film, a source of ultraviolet...     
4894254 Method of forming silicone film Jan-16-1990
A silicone film is formed by drying a solution coated on a substrate at a temperature below 150.degree. C. to form a silicone film on the substrate, treating the silicone film in an oxygen plasma, and heating the silicone film treated in the plasma at a temperature of 150.degree. C. or higher.
4901667 Surface treatment apparatus Feb-20-1990
A surface treatment apparatus comprising a vacuum chamber, means for introducing a gas into the vacuum chamber, a gas furnace for heating and activating the gas while it is being introduced, apertures for injecting the heated gas, and a substrate stage for holding a substrate of which the surface is...     
4902934 Plasma apparatus Feb-20-1990
A plasma apparatus which is; provided with a pair of plasma generation chambers at both sides of a specimen chamber provided therein with two specimen mounts for fixing specimens to be subjected to the predetermined processing such as plasma CVD; designed to use the specimen chamber in common so as to...     
4907534 Gas distributor for OMVPE Growth Mar-13-1990
A new gas distributor 31 provides an extremely uniform gas across a wide cross section distance. An OMVPE reactor equipped with this distributor, a unique low volume quartz insert, a load-locked growth chamber and a low pressure operation scheme provide a reactor system capable of growing extremely uniform...     
4911103 Processing apparatus and method Mar-27-1990
A process module which is compatible with a system using primarily vacuum wafer transport, but which permits processing multiple slices in parallel in a single module. This is accomplished by using notched quartz arms in the module, so that the transfer arm can place each of several wafers into one set...     
4920920 Apparatus for producing semiconductor devices May-1-1990
An apparatus for producing semiconductor devices has a hollow reaction tube which receives a boat carrying a row of a multiplicity of semiconductor wafers held in vertical posture. A flow stabilizing member is disposed in the vicinity of the wafer which is on the downstream end of the wafer row as viewed...     
4924936 Multiple, parallel packed column vaporizer May-15-1990
A multiple, parallel packed column vaporizer for vaporizing a chemical having a relatively low decomposition temperature includes a shell; a plurality of parallel, vertically oriented vaporization columns arranged in the shell, each vaporization column having inner walls and upper and lower open ends;...     
4927359 Fluid distribution apparatus May-22-1990
A two-stage gas distribution nozzle for a muffle furnace includes an inner pipe with spaced apertures for feeding gas at spaced intervals to an outer pipe enclosing the inner pipe. The outer pipe includes spaced apertures facing in a direction such that the jets of gas from the inner pipe impinge on...     
4932357 Vacuum apparatus Jun-12-1990
A vacuum apparatus comprising a substrate setting disc which is arranged in a conveyance chamber and on which substrates are placed, a drive system which drives and rotates the disc, a cam which is fixed to the disc, switching means to switch signal circuits through the cam, calculation means to receive...     
4935623 Production of energetic atom beams Jun-19-1990
Beams of energetic atoms are produced by furnishing a beam of energetic ionized clusters and disintegrating the clusters to produce a beam of energetic atoms. The energetic ionized clusters are provided by forming a beam containing uncharged particles, both clusters and atoms, ionized the particles,...     
4936252 Equipment for manufacturing semiconductor devices Jun-26-1990
An equipment for manufacturing semiconductor devices has: a reaction chamber in which a substrate to be processed is placed; means for evacuating the reaction chamber; means for introducing a reaction gas into the reaction chamber; means for applying polarized light to the surface of the substrate for...     
4940213 Exhaust processing apparatus Jul-10-1990
An exhaust processing apparatus comprises a cracking furnace for cracking and solidifying exhaust discharged from a reactor for forming crystals on a semiconductor substrate, a first collecting device for collecting relatively large components solidified in the cracking furnace, a second collecting device...     
4941429 Semiconductor wafer carrier guide tracks Jul-17-1990
A track system is used in a continuous chemical deposition reaction system to guide semiconductor wafer carriers through a plurality of interconnected reaction chambers to position the carriers in each reaction chamber, and to prevent wear to the bottom of the reactor chambers.
4943457 Vacuum slice carrier Jul-24-1990
A vacuum-tight wafer carrier. The wafers are supported at each side by a slightly sloping shelf, so that minimal contact (line contact) is made between the wafer surface and the surface of the shelf. This reduces generation of particulates by abrasion of the surface of the wafer. The door of the vacuum...     
4945856 Parylene deposition chamber Aug-7-1990
Disclosed is a parylene deposition chamber wherein reactive monomer vapors enter the chamber tangentially so as to create a rotational flow of vapor within the interior of the chamber. A substrate support fixture is positioned within the chamber and rotated in a direction counter to the rotational flow...     
4949671 Processing apparatus and method Aug-21-1990
A processing apparatus and method wherein two separate gas feeds are provided in proximity to the face of a face down wafer. A shroud can be used to maximize mixing of the two gas feed streams without excessive residence time.
4951601 Multi-chamber integrated process system Aug-28-1990
An integrated modular multiple chamber vacuum processing system is disclosed. The system includes a load lock, may include an external cassette elevator, and an internal load lock wafer elevator, and also includes stations about the periphery of the load lock for connecting one, two or several vacuum...     
4952299 Wafer handling apparatus Aug-28-1990
A device (24) for handling semiconduct wafers in a vacuum which includes a wafer-receiving arm (80) located in a vacuum chamber and an operating shaft (76) which extends from the vacuum chamber into an atmospheric chamber. The shaft is driven in an axial direction by means of a motor-driven ball screw...     
4957781 Processing apparatus Sep-18-1990
A processing apparatus includes a processing chamber and an insertion jig for inserting an object to be processed into the processing chamber. The processing chamber and the insertion jig are adapted to be individually movable relative to a heating section, so that the operation of loading and unloading...     
4970435 Plasma processing apparatus Nov-13-1990
In a plasma processing apparatus of this invention, a reaction chamber opposed to a plasma generating chmaber is entirely opened at its one side surface opposing the obect to be processed, and an interval between the one side surface and the other side surface is set to be an integer multiple of a 1/2...     
4975252 Semiconductor crystal growth apparatus Dec-4-1990
A substrate is heated in a crystal growth vessel evacuated to a ultrahigh vacuum, and gases containing component elements of a crystal to be grown on the substrate are introduced into the vessel under predetermined conditions to cause successive epitaxial growth of single molecular layers, the number...     
4976216 Apparatus for vapor-phase growth Dec-11-1990
In an apparatus for vapor-phase growth which comprises a reactor having an inlet for the introduction of the gas containing a source material on its top and a susceptor provided in the downstream portion of the reactor, the improvement wherein the susceptor is generally in a conical or polygonal pyramid...     
4979465 Apparatus for producing semiconductors Dec-25-1990
The present invention relates to an apparatus for producing semiconductors utilizing vacuum chemical epitaxy (VCE) method. Said VCE method has a high utilization efficiency of reactant gas and can finish the surface of a semiconductor layer formed on the surface of a substrate smoothly in comparision...     
4982693 Semiconductor vapor phase growing apparatus Jan-8-1991
In a semiconductor vapor phase growing apparatus wherein a semiconductor wafer is heated in a reaction furnace, and an output of a source for heating, the temperature of the wafer, and flow quantities of gases supplied to the reaction furnace for vapor phase growing a semiconductor on the wafer by a...     
4986212 Metallizing apparatus Jan-22-1991
A metallizing apparatus vacuum deposits a metal onto a workpiece. Filaments having a metal thereon extend between a pair of electrode rods and are heated by conduction of electric current. The end portions of the filaments are secured to the respective rods by a securing apparatus which includes a support...     
4986216 Semiconductor manufacturing apparatus Jan-22-1991
A semiconductor manufacturing apparatus includes members for uniformly supplying a reactant gas into a chamber and uniformly discharging it from the chamber, and two rectifying members disposed on opposite sides of a substrate for making the flow rate and the direction of the reactant gas constant. This...     
4989540 Apparatus for reaction treatment Feb-5-1991
A treatment apparatus used in manufacturing processes for semiconductor devices and the like, in which substrates are treated by means of a reaction gas. An inner tube, which is coaxially disposed in a reaction tube, defines a reaction region surrounding the substrates to be treated. The inner tube has...     
4989541 Thin film forming apparatus Feb-5-1991
A thin film forming apparatus includes, in addition to a material gas nozzle, a control gas nozzle for jetting a control gas flow which encircles a material gas flow jetted from the material gas nozzle against a substrate supported in a reaction chamber, so as to shape the material gas flow into the...     
4990374 Selective area chemical vapor deposition Feb-5-1991
A fluid dynamic method and apparatus effects the isolation of a predetermined deposition area in a hot-walled chemical vapor deposition chamber and limits the deposition to that area. The disclosed technique reduces stress and cracking in materials produced by chemical vapor deposition, prevents backside...     
4991540 Quartz-glass reactor for MOCVD systems Feb-12-1991
A reactor for MOCVD systems, having a reaction vessel through which the reacting gas or gases flow and in which the substrates are arranged in such a manner that a main surface is approximately parallel to the flow direction. The reaction vessel is made of quartz-glass and has, at least in the region...     
4993361 Chemical vapor deposition Feb-19-1991
Precursor (9) is atomized by being ionized (11,12) and is then vaporized (14) prior to deposition. The ionized vapor is controlled by electrodes (2,15) to control its flow and/or its deposition on a substrate.
4995340 Glass coating apparatus Feb-26-1991
An apparatus for coating flat glass by directing a reactant gas over the glass surface incorporates a gas flow restrictor which comprises a chamber which is adapted to receive a supply of reactant gas and is adapted to output a flow of the reactant gas over the flat glass being coated. A series of at...     
5002011 Vapor deposition apparatus Mar-26-1991
A vapor deposition apparatus for forming thin films on substrates with reactive gases, by rotating and revolving the substrates while heating the substrates in a reactor vessel, comprises a hollow susceptor carrier rotatably disposed inside the reactor vessel, susceptors rotatably disposed on the susceptor...     
5006192 Apparatus for producing semiconductor devices Apr-9-1991
An apparatus for treating wafers utilizing the plasma produced by a gas discharge and a method of cleaning such apparatus are disclosed. The apparatus is equipped with a device for forming a high voltage electric field in a space outside of the discharge space in which the wafer treating plasma is generated....     
5007372 Vacuum depositing apparatus Apr-16-1991
A vacuum depositing apparatus for forming a vapor-deposited film by evaporation of a material to be vapor deposited onto the surface of a substrate under vacuum, whereby mechanisms are provided to prevent impurities, due to contamination in the vacuum vessel or impurities caused by thermal deterioration...     
5010842 Apparatus for forming thin film Apr-30-1991
Apparatus for forming a thin film on a substrate surface by a CVD (Chemical Vapor Deposition) method which includes diffusing pipes for diffusing and supplying a first reactive gas, and uniformizing plates for supplying uniformly an active species formed through excitation of a second reactive gas. The...     
5016567 Apparatus for treatment using gas May-21-1991
A heat treatment apparatus used in the manufacturing of semiconductor devices and the like, for treating with a reaction gas substrates placed in a reaction tube of the apparatus. A support table is provided within the reaction tube, for supporting substrates during a treatment process, and is rotated...     
5017317 Gas phase selective beam deposition May-21-1991
A method and apparatus for selectively depositing a layer of material from a gas phase to produce a part comprising a plurality of deposited layers. The apparatus includes a computer controlling a directed energy beam, such as a laser, to direct the laser energy into a chamber substantially containing...     
5020476 Distributed source assembly Jun-4-1991
Apparatus of quartz or silicon carbide for use in horizontal or vertical furnace tubes, applicable to both diffusion/oxidation processes and to low pressure chemical vapor deposition process. The primary objectives include the adjustment of process gas flow distribution to improve film growth and composition...     
5026454 Vacuum evaporation and deposition Jun-25-1991
Method and apparatus for the deposition of material onto a substrate, the method comprising evaporating material from a source, controlling the dosage of material at the substrate by moving a shutter between an open position and a closed position, with a closing step comprising beginning to decelerate...     
5035200 Processing liquid supply unit Jul-30-1991
A processing liquid supply unit comprises a storage tank for storing a processing liquid, a sensor for sensing the amount of processing liquid stored in the storage tank, a refilling mechanism for automatically refilling the processing liquid into the storage tank when the sensor senses that the amount...     
5038711 Epitaxial facility Aug-13-1991
An epitaxial facility with at least one reaction chamber made of dielectric material, comprising a gas inlet in the ceiling area and a gas outlet in the floor area, a gas mixer connected to the gas inlet of the reaction chamber for the infeed of reaction and scavenging gases, a polyhedral support made...     
5044311 Plasma chemical vapor deposition apparatus Sep-3-1991
A plasma chemical vapor deposition apparatus comprises a reaction chamber, electrodes provided in the reaction chamber and a side wall constituting part of the reaction chamber and having a wafer access opening, at least the side wall having its surface portion covered with an insulating member. The...     
5044314 Semiconductor wafer processing apparatus Sep-3-1991
A semiconductor wafer processing apparatus has a processing housing including a pair of coaxial hollow cylindrical members each defining an inner cylindrical chamber for directing a treatment medium toward a wafer and an annular chamber for withdrawing the treatment medium. A wafer support which can...     
5050534 Mobile injector system Sep-24-1991
A mobile injector system with a CVD door assembly including flexible tubing secured to the door, a hole for accommodating a SiC or like paddle, and an injector clamp securing the injector tubes to the paddle. The CVD door assembly mates to a gas ring. A gas inlet channel extends through the CVD door...     
5058527 Thin film forming apparatus Oct-22-1991
A thin film forming apparatus for forming a thin film on a substrate with a vaporized source material being supplied from an external material supplying unit. The thin film forming apparatus comprises a vacuum chamber for providing a vacuum pressure at which the vaporized source material is deposited...     
5062386 Induction heated pancake epitaxial reactor Nov-5-1991
In an inductively heated pancake epitaxial reactor the reactant gases are fed vertically into a bell jar of reduced height via a plurality of coaxial centrally disposed flow passageways, one of which is outwardly flared to impart a radial component of velocity to one or more of the flows. The density,...     
5065697 Laser sputtering apparatus Nov-19-1991
A laser sputtering apparatus includes a vacuum chamber, a laser for radiating a laser beam, a vacuum sealing window arranged at the chamber for introducing the beam into the chamber, a film transporting device for transporting a film while the film is passing near the window and a substrate holder arranged...     
5074245 Diamond synthesizing apparatus Dec-24-1991
A diamond synthesizing apparatus has a reaction tube for internally causing a reaction for vapor-phase synthesizing diamond. A plasma generator produces the required microwave plasma in the reaction tube. The reaction tube is coupled with a gas reservoir, which forms a circulation system with the reaction...     
5076205 Modular vapor processor system Dec-31-1991
A system for multichamber processing of semiconductor wafers providing flexibility in the nature of processing available in a multi processing facility. To accommodate changing processing demands and chamber replacement, a mobile processing chamber selectively docks with a multiple chamber system to...     
5080039 Processing apparatus Jan-14-1992
A processing apparatus includes a processing chamber and an insertion jig for inserting an object to be processed into the processing chamber. The processing chamber and the insertion jig are adapted to be individually movable relative to a heating section, so that the operation of loading and unloading...     
5080870 Sublimating and cracking apparatus Jan-14-1992
A furnace having a sublimating section, a cracking section oriented off axis to the sublimating section, and a valve for controlling flux between the sections. The valve includes an annular plug having at least one longitudinal slot. The plug is retractable from a fully closed position where the slot...     
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