Thermocouple sheath cover

6169244
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Inventors

Carlos, Thomas F.
Moore, Gary M.

Application #

316933

Filed

May-21-1999

Published

Jan-2-2001

Current US Class

118/715
136/201
136/230
374/208

International Classes

H01L 035/32

Field of Search

136/201 136/230 374/208 374/209 118/712 118/715 118/724 118/725 117/86 117/900

Assignee

Moore Epitaxial, Inc. (San Jose, CA)

Examiners

Gorgos; Kathryn

Attorney, Agent or Firm

Hodgson; Serge J. Gunnison, McKay & Hodgson, L.L.P.

US Patent References

4978567   Wafer holding fixtu...
5053247   Method for increasi...
5207835   High capacity epit...
5444217   Rapid thermal pro...
5580388   Multi-layer suscept...
5710407   Rapid thermal pro...
5802099   Method for measuri...
5820686   Multi-layer suscept...
5872632   Cluster tool layer th...

Referenced by:

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Citation

Cite This Patent

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Abstract
A sheath cover for a quartz thermocouple sheath has an outer surface which includes silicon carbide. The silicon carbide has a greater adherence to deposits than quartz. The cover thus essentially eliminates deposit flaking and avoids the particulate contamination associated with conventional quartz thermocouple sheaths. The cover includes first and second half sections and a slip ring. The cover is easily installed over the sheath by placing the half sections around the sheath and then sliding the slip ring into place around the half sections.
 
Claims
We claim:

1. A structure comprising:

a cover having a n outer surface, said cover mounted about an article used in a substrate processing reactor, wherein said outer surface has a greater adherence to deposits than said article,

wherein said cover further comprises:

a first section;

a second section, wherein said first section and said second section enclose at least a portion of said article; and

a retainer, wherein said retainer holds said first section and said second section in place.

2. The structure of claim 1 wherein said first section is a mirror image of said second section.

3. The structure of claim 1 wherein said first section and said second section are in abutting contact, said first section and said second section forming an enclosure.



Description
BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates generally to semiconductor process equipment, and more particularly, to a thermocouple sheath cover suitable for use in a semiconductor reactor.

2. Description of the Related Art

Semiconductor processing typically involves the formation of one or more layers on a semiconductor substrate. For example, silicon epitaxy, sometimes called epi, is a process in which one or more layers of single-crystal (monocrystalline) silicon are deposited on a monocrystalline silicon wafer.

Unavoidably, these deposited layers are not only deposited on the substrate but are also undesirably deposited on other parts of the epi reactor. FIG. 1 is a schematic representation of an epi reactor 10 which illustrates the accumulation of undesirable deposits on a thermocouple sheath in accordance with the prior art.

As shown in FIG. 1, reactor 10 includes a quartz dome 12 which forms a reactor enclosure 14 with a reactor base section 16. Located within enclosure 14 are one or more substrates 18, typically monocrystalline silicon wafers, supported by a susceptor 20.
 
  A resist-processing apparatus comprising a plurality of first processing units, a second processing unit, a first transport unit, a second transport unit,...  A method for manufacturing a semiconductor device including preparing a multi-chamber system having at least first and second chambers, the first chamber...