By means to heat or cool

Method and apparatus are provided for depositing a coating of uniform thickness across a substrate coated by a vapor-deposition process, for confining and directing the vapor to the substrate in a manner to minimize vapor loss, and for conveniently collecting vapor which bypasses the substrate. A pair...     

A gas reaction apparatus has an activation chamber, a heat exchanger and a reaction chamber. A gas is introduced into the activation chamber and activated there by electric discharge. The activated gas is then cooled by the heat exchanger in case a reaction to be effected in the reaction chamber is exothermic...     

An apparatus for chemically vapor-depositing a material onto surfaces of a plurality of substrates within a reaction chamber comprises means positioned within the chamber for supporting the substrates in a stack-like relationship wherein the surfaces are substantially parallel to each other and are separated...     

A processing apparatus for tissue specimens, e.g. for histological examination, comprises a vessel defining a vapor space above heating means and a receptacle for volatile processing liquid and, near the upper end of that space, means for condensing vapor in the upper part of the space and for returning...     

This invention relates to an apparatus for continuous glow discharge nitriding treatment whereby a workpiece is treated while it is being transferred in a vacuum chamber. It comprises a heating means to heat the workpiece up to the suitable temperature at which glow discharge nitriding is going on steadily,...     

Electron beam vaporizer having a beam generator with a heated cathode, focusing means and electromagnetic deflection means for the deflection and guidance of the beam. An exchangeable, fluid-cooled and preferably rotatable vaporizing crucible associated with the beam generator and having at least one...     

This invention relates to the art of coating glassware while the ware is moving through an annealing lehr which is provided with a cooling section near the exit end of the lehr. The cooling section is of the continuous recirculation type providing an arrangement for generally cooling the ware to a relatively...     

Method for cryoinduced uniform deposition of cryogenic materials, such as deuterium-tritium (DT) mixtures, on the inner surface of hollow spherical members, such as inertially imploded targets. By vaporizing and quickly refreezing cryogenic materials contained within a hollow spherical member, a uniform...     

Apparatus and method for growing oxide on silicon wafers or silicon-coated wafers or other semiconductors for the semiconductor industry wherein the oxide growth is produced under high pressure and high temperature conditions within a reaction chamber by oxidizing gases which are maintained in a continuous...     

Apparatus for the chemical synthesis of an evaporant and a liquid has a cryogenic pumping device between the evaporant source and the reaction region and a pump causes the liquid to be continuously recirculated until the reaction is completed, the pressure in the evaporation region being maintained substantially...     

A device for manufacturing a photosensitive screen comprising a vapor supply source and a mesh-shaped electric conductive substrate arranged above the vapor supply source along at least one portion of a circular plane having a center located at the vapor supply source.

The vacuum evaporation apparatus comprises a housing having walls defining n evacuable evaporation chamber with an evaporator in the chamber disposed below a supporting structure for the substance to be coated and including an annular screen disposed around the evaporator between the evaporator and the...     

Apparatus and method for cryoinduced uniform deposition of cryogenic materials, such as deuterium-tritium (DT) mixtures, on the inner surface of hollow spherical members, such as inertially imploded targets. By vaporizing and quickly refreezing cryogenic materials contained within a hollow spherical...     

An apparatus for vacuum deposition of a thin film onto the surface of a substrate includes a vacuum container formed by a base plate, a cylindrical side wall and a top plate to accommodate at least four movable sealing caps each having a space adapted to confine a batch of substrates on a carrier of...     

A method and apparatus for storing radioactive materials, in which a metal halide or a metal carbonyl compound is introduced from a cylinder to the vicinity of a solid material while a gaseous radioactive material provided from a reservoir, ionized and accelerated is being implanted into the solid material,...     

Apparatus for thermal oxidation of silicon wafers at high pressures of a type wherein a reactor of a refractory material is disposed within a pressure vessel, and wherein a margin of a wafer portal of the reactor and a closure of the refractory material have congruent surfaces enabling a hermetic seal...     

An apparatus and method for coating a substrate with a thin film of material. The coating material is converted to a mist by means of an ultrasonic nebulizer and transported by a carrier gas to a chamber which contains the substrate where the mist is allowed to settle onto the substrate under the force...     

The vacuum treating device, comprises a housing defining an interior treatment chamber which is connected to a pump for evacuating the chamber. The carrier for holding a product is mounted within the housing in opposition to a holder for the material which is to be vaporized to form a coating. The support...     

A high-pressure, high-temperature gaseous chemical apparatus particularly designed for oxidation of silicon wafers and providing for pressure equalization across the wall of the vessel providing the reaction chamber, for a water boiling enclosure within the reaction chamber and the injection of liquid...     

In a vacuum container an active (or atomic state) gas consisting of either one of active hydrogen, active oxygen and active nitrogen with a partial pressure of 1.times.10.sup.-3 Torr or less is produced. In an atmosphere of the active (or atomic state) gas, a film, which consists of a compound presenting...     

A plasma deposition apparatus having a plasma formation chamber and a specimen chamber which are arranged separately. Gaseous material and microwave power are introduced to the plasma formation chamber to generate plasma by a microwave discharge through electron cyclotron resonance. The plasma is extracted...     

A workpiece holder for semiconductor workpieces during treatment with a substantially cylindrical casing shaped like a hockey puck having an upper surface for receiving a workpiece, a lower surface, at least one bore between the surfaces for applying a vacuum and a hollow interior for a heat absorbing...     

A vapor-phase axial deposition system (5) for fabricating a lightguide soot boule (16). The system (5) is comprised of a short cylindrical housing (10) having end plates (26--26) affixed thereto. A starting member (58) is radially directed into the central portion of the housing (10) and a torch (12)...     

An annealing method wherein an elongated irradiation area is formed by a light source whose emitted light is controlled so that a peak curve of the illuminance distribution in the area may be substantially linear and that equiluminous curves near the peak curve may be substantially parallel therewith....     

A bell made of opaque fused silica and intended for use in the deposition of polycrystalline silicon is assembled from at least three individual sections. The sections are joined to one another at end flanges with gaskets between the flanges. The lengths of the individual sections are determined by the...     

Disclosed herein is a method for operating a light-radiant furnace equipped with incandescent lamps as the light-radiant source thereof. The method includes a step of transporting a plurality of objects successively into the light-radiant furnace and controlling the operation of the incandescent lamps...     

In a photochemical vapor deposition apparatus, a reaction space forming a passage for a photoreactive gas, in which reaction space a substrate is to be placed, and a discharge space, in which electric plasma discharge is generated for radiating ultraviolet rays which cause photochemical reaction of the...     

A gas is introduced into a surface treatment chamber and is activated therein. The surface of a specimen placed in the surface treatment chamber is treated by using reactive species generated by this activation. A means of supplying controllable energy such as the energy of heat, light, or electron beams...     

A sputter coating machine (11) includes a rectilinearly translatable load-lock door (16) closing off one end of a vacuumable chamber (12). Wafers (21) to be coated are loaded and unloaded by an elevated blade (24) onto a chuck (57) carried from the inside surface of the door (16). A clamping ring (85)...     

A sputter coating machine includes a rectilinearly translatable load-lock door closing off one end of an evacuable chamber. Wafers to be coated are loaded and unloaded by an elevator blade onto a chuck carried from the inside surface of the door. A clamping ring clamps the wafer to the chuck and advances...     

A magnetic recording medium manufacturing apparatus is comprised of a cooling rotary cylinder can and a small roller, arranged adjacent to each other, and with the small roller being swingable about the central axis of the can. A flexible endless belt is laid over the can and roller and carries a tape-shaped...     

Disclosed herein is a photoheating apparatus for heat-treating an object such as silicon semiconductor wafer in a flowing gas of a special composition. It comprises a container adapted to position the object therein, at least one part of the container being transparent, a heat-radiating lamp adapted...     

A vacuum evaporation apparatus for depositing an evaporant as a thin film on a substrate comprises a sealed container including a substrate support for mounting thereon the substrate. A heat medium such as of diphenyl, for example, is filled in the substrate support. The heat medium in the substrate...     

An improved chemical vapor deposition device having heating means substantially surrounding an inner deposition chamber for providing isothermal or precisely controlled gradient temperature conditions therein. The internal components of the chamber are quartz or similar radiant energy transparent material....     

A chemical vapor deposition device having uniformly distributed heating means substantially surrounding an inner deposition reaction chamber for providing isothermal or precisely controlled gradient temperature conditions therein, the reaction chamber being surrounded by the walls of an outer vacuum...     

A method for annealing semiconductor samples, especially following ion-implantation of semiconductor samples is disclosed. A furnace on a set of rails is passed over the semiconductor sample which is supported on a stationary wire basket made of low thermal mass, fine tungsten wire. The furnace temperature...     

A substrate having two parallel planar faces and an edge with a groove is simultaneously coated on both sides in a vacuum chamber. The substrate is raised, lowered and held on edge while the parallel faces are vertically disposed by a blade inserted into the groove so that while the substrate is coated...     

Evacuable equipment wherein for effective thermal transfer use is made of a thermally conductive fluid confined by a flexible diaphragm for heat transfer across the diaphragm between the fluid and a component forming part of or being treated in the equipment and situated under vacuum in thermal contact...     

A continuous, in-line deposition system is disclosed for coating large substrates. The apparatus includes loadlock chambers for loading and unloading substrates arranged in carriers. The carriers transport through the apparatus a plurality of pairs of substrates with their principal faces, that is faces...     

A rotary drum comprises a hollow cylindrical outer member, a coaxial hub, and a plurality of spokes pivotally connected to the outer member and to the hub, all the spokes being aligned at the same oblique angle to the radius at the respective connections to the hub. Thermal expansion of the outer member...     

An improved reaction chamber for CVD is disclosed that combines the advantageous features of the known horizontal and vertical designs while minimizing their respective short comings. The improved reaction chamber essentially comprises a vertical, double-walled reaction tube having a tapered top provided...     

Chemical vapor deposition on a semiconductor wafer is obtained in a plasma reactor having a plurality of lamps for radiantly heating the wafer. Calibrated temperature sensing means remote from the wafer is used to control the heating of the wafer. Gases are supplied by way of a plurality of tubes extending...     

In a dry-processing apparatus adapted for vapor phase deposition or vapor phase etching, the processing space in its processing chamber is covered with a cooled member provided for trapping reflecting active particles and preventing degassing, thereby permitting processing with gas of high purity substantially...     

A photochemical vapor deposition apparatus which includes a reaction chamber, a means for introducing a starting gas for film formation into the reaction chamber and a means for irradiating the starting gas with a light of high energy and deposites a thin film on a substrate placed in the reaction chamber...     

Apparatus for programmably orienting a semiconductor wafer in an ion implantation system so as to limit channeling and to control the depth of penetration of impinging ions. The apparatus is associated with a processing chamber door and includes a rotatable vacuum chuck for engaging the wafer and a motor...     

A vacuum processing apparatus for applying a vacuum working process to a substrate to be processed by a plurality of processing steps comprises vacuum containers exclusively for use for processing disposed in place for each of the processing steps, and a vacuum container exclusively for use for conveyance...     

An epitaxial growing apparatus comprises a base plate, a quartz bell jar mounted on the base plate, and a reaction chamber defined by the base plate and the quartz bell jar, in which an epitaxial thin film layer of a semiconductor substance is formed on the substrate mounted on a support member. A metal...     

In vacuum depositing apparatus, especially for the manufacture of magnetic tapes, a substrate holder is disposed in the form of a cooling cylinder, and in the path of the vapor stream there is a mask for the purpose of geometrically restricting the vapor stream. In order to prevent any condensation of...     

A vacuum evaporation equipment for continuous vacuum evaporation of a metal onto a band or strip of product including at least one vacuum sealing station, provision of ducts that are disposed surrounding the band product and extending from the point of vapor deposition where the band product is subjected...     

An apparatus is provided for selectively depositing metal films on metal and semiconductive surfaces of a substrate wherein the depositing surface of the substrate is isolated from undesired impinging radiation, such as infrared radiation.

An apparatus for growing a compound semiconductor on a substrate by molecular beam epitaxy, includes a growth chamber, and Knudsen cells, disposed in the growth chamber, for generating molecular beams of source materials for the compound semiconductor independently. An ion gauge is disposed in the growth...     

Apparatus for evaporating numerous layers of various substances upon a substrate includes square witness chips transparent to a specific beam of radiation. A witness chip holder, having a cylindrical base, has an axial hole vertically disposed from its central axis. The axial hole has a cross-sectional...     

An apparatus for forming a deposited film comprises a chamber, which can be brought into a reduced pressure, for forming a deposited film on a substrate by introducing a starting gas into said chamber and decomposing or polymerizing said gas, the apparatus is provided with both a means for decomposing...     

The use, for heat transfer in evacuable or other equipment, of a thermally conductive fluid, confined by a flexible diaphragm, for heat transfer across the diaphragm between the fluid and a component placed in thermal contact with the diaphragm.

One fast cool-down furnace embodiment discloses a double wall in the interspace of which a cooling air stream is flowable to provide fast cool-down of a load of wafers. The double wall embodiment is retrofittable on existing diffusion furnace, and includes a cylindrical member aligned in concentric relation...     

A process for the high pressure synthesis of InP using an independent temperature control of a three zone furnace incorporating a heat pipe provides a stable temperature profile throughout the synthesis cycle. Internal/external pressure control of the quartz ampoule is maintained by use of a water cooled...     

A thin-film depositing apparatus which includes a reaction container adapted to receive a material gas therein, for a thin-film depositing reaction, a substrate supporting member located in a predetermined position in the reaction container in order to set a substrate on which a thin film is to be deposited,...     

Preferred embodiments include a chemical beam epitaxy system (30) with cells for Group III compounds (44) and Group V compounds (40) for epitaxial growth of III-V semiconductor materials on a substrate (38) together with an atomic hydrogen cell (42) for scavenging carbonaceous residues during the chemical...     

An apparatus for surface treating a sample article with activated particles, comprising a reaction chamber in which a sample article to be surface processed is placed, means for introducing a reaction gas into the reaction chamber, an activation surface properly set in the reaction chamber and arranged...     

A surface treatment apparatus comprising a vacuum chamber, means for introducing a gas into the vacuum chamber, a gas furnace for heating and activating the gas while it is being introduced, apertures for injecting the heated gas, and a substrate stage for holding a substrate of which the surface is...     

A vacuum-tight wafer carrier. The wafers are supported at each side by a slightly sloping shelf, so that minimal contact (line contact) is made between the wafer surface and the surface of the shelf. This reduces generation of particulates by abrasion of the surface of the wafer. The door of the vacuum...     

The interior of a chamber within which a target assembly is disposed is evacuated to remove residual impurity gases while heated water flows within the target assembly. When the internal pressure within the chamber drops belows a predetermined level, cooled water flows within the target assembly, and...     

A vapor deposition apparatus includes a vacuum chamber into which an active gas, an inert gas or a mixture of the active gas and the inert gas, a reactor for converting a gaseous raw material into a gaseous thin-film forming substance, and a nozzle attached to the reactor so as to blow out the gaseous...     

A substrate is heated in a crystal growth vessel evacuated to a ultrahigh vacuum, and gases containing component elements of a crystal to be grown on the substrate are introduced into the vessel under predetermined conditions to cause successive epitaxial growth of single molecular layers, the number...     

A treatment apparatus used in manufacturing processes for semiconductor devices and the like, in which substrates are treated by means of a reaction gas. An inner tube, which is coaxially disposed in a reaction tube, defines a reaction region surrounding the substrates to be treated. The inner tube has...     

Pre- and post-processing of a semiconductor wafer within a main vacuum chamber is accomplished by a wafer holder disposed within a clam shell-like device. The clam shell device includes a first member disposed above the wafer holder and a second member disposed below the wafer holder in a facing relationship...     

A plasma CVD apparatus having a rotary vacuum reaction vessel, a starting gas introducing port, an ambient gas introducing port, an exhaust port, electrodes or an induction coil for applying a high-frequency electric field, and a cooling pipe provided in the starting gas introducing port for cooling...     

An epitaxial facility with at least one reaction chamber made of dielectric material, comprising a gas inlet in the ceiling area and a gas outlet in the floor area, a gas mixer connected to the gas inlet of the reaction chamber for the infeed of reaction and scavenging gases, a polyhedral support made...     

In an inductively heated pancake epitaxial reactor the reactant gases are fed vertically into a bell jar of reduced height via a plurality of coaxial centrally disposed flow passageways, one of which is outwardly flared to impart a radial component of velocity to one or more of the flows. The density,...     

A laser sputtering apparatus includes a vacuum chamber, a laser for radiating a laser beam, a vacuum sealing window arranged at the chamber for introducing the beam into the chamber, a film transporting device for transporting a film while the film is passing near the window and a substrate holder arranged...     

A vertical low pressure chemical vapor deposition, LPCVD, reactor that may be used to form deposition films on semiconductor wafers is disclosed. The vertical LPCVD reactor has a reaction chamber with a top portion and a bottom portion. A furnace heats the reaction chamber. Deposition gases are introduced...     

The present invention relates to a plasma processor in which a sample such as semiconductor substrate is processed with a plasma under a cooled state. An electric insulator is interposed between a sample holder for arranging the sample thereon and a cooling container for cooling the sample holder, so...     

A furnace having a sublimating section, a cracking section oriented off axis to the sublimating section, and a valve for controlling flux between the sections. The valve includes an annular plug having at least one longitudinal slot. The plug is retractable from a fully closed position where the slot...     

Electroluminescent phosphors, electroluminescent panels and lamps made with such phosphors, and a process and apparatus for treating phosphors are disclosed in which the phosphor particles are coated with a very thin coating of SiO.sub.2, to protect the phosphor particles from aging due to moisture intrusion....     

An apparatus for preventing edge and backside coating during CVD processing supports a wafer on flexible supports within a purge cavity in a pedestal such that a movable clamp ring deforms the supports, forms a slot with the frontside of the wafer around the periphery of the wafer and by contacting the...     

A reactant gas is fed to a dispersing chamber which is disposed under a reaction chamber, and both disposed within a vacuum chamber. The reactant gas is dispersed and then fed through a plurality of communicating holes to the reaction chamber. A second reactant gas is fed to a lower dispersing chamber....     

A system for pumping down pressurized gas residing after shut-off in the piping use to provide a gas flow to facilitate backside wafer heating/cooling during the processing of a semiconductor wafer and including a valve selectable secondary piping line for equalizing on shutoff any pressure differential...     

A sublimating and cracking device which may be used to produce a collimated beam of molecules from a solid source. The device includes an elongated sublimating tube and an elongated cracking tube adapted to be axially oriented off axis to each other. The sublimating and cracking tubes are interconnected...     

An evaporation apparatus includes a vacuum chamber, a vacuum pump for producing a pressure-reduced atmosphere in the vacuum chamber, at least one vacuum evaporation source for evaporating an evaporation material provided in the vacuum chamber, a can, opposed to the vacuum evaporation source and rotating...     

The present invention is directed to a mixture thin film forming apparatus for accumulating gasified components on a substrate which is arranged in a reaction chamber. According to the present invention, respective components of a gas supply system, which are different in heat capacity from each other,...     

Impurity doping apparatus composed of a vacuum chamber, a heater for heating a silicon substrate in the chamber, and a gas supply source for supplying a diborane gas containing an impurity component of boron to the chamber. A regulating valve is disposed between the chamber and the gas supply source...     

An apparatus is disclosed for coating articles with a coating material by vapor deposition wherein a cellular fixture is employed for tumble coating the articles. The cellular fixture comprises multiple cells disposed radially about a common axis of rotation. The cells comprise hollow members having...     

A barrel epitaxial reactor having a greater batch capacity than prior art barrel epitaxial reactors which produces an epitaxial layer quality at least as good as that produced by the prior art barrel epitaxial reactors is disclosed. The batch capacity of prior art barrel epitaxial reactors is improved...     

A magnetic field enhanced single wafer plasma etch reactor is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and...     

An ashing apparatus of the vertical type comprises a reaction tube erected in the vertical direction to house therein a plurality of semiconductor wafers, an inner tube arranged in the reaction tube to enclose the semiconductor wafers and having a plurality of holes through which activated radicals in...     

An apparatus for vapor deposition including a vapor deposition section to which at least one semiconductor material supply passage and at least one alkoxide material supply passage are connected, first heating means provided for the vapor deposition section and capable of maintaining the temperature...     

A vertical type of heat treatment apparatus which houses objects for treatment loaded on a wafer boat, in a process tube and performs heat treatment, and including a cap which opens and closes an opening portion of a manifold and which is disposed on the side of an opening portion of the process tube,...     

The invention provides an oxidation method which utilizes a processing tube, a combustion chamber connected to the processing tube, inner and outer coaxial guide tubes connected to the combustion chamber, and an auxiliary combustion chamber connected to the combustion chamber, which includes the steps...     

A thin film deposition method consists of depositing a thin film on a wafer by supplying a reactant gas molecules toward and onto the wafer within a vacuum vessel or chamber. The pressure within the vacuum vessel is set to the pressure under which the mean free path (d) of the molecules contained in...     

A suitable inert gas such as argon or a mixture of inert and reactive gases such as argon and hydrogen is introduced onto the backside of wafers being processed in a CVD reactor during the deposition of tungsten or other metals, metal nitrides and silicides, to avoid deposition of material on the backside...     

A semiconductor device manufacturing apparatus has a heat retaining tube which can be freely placed in and pulled out of a processing chamber of the apparatus. When located within the processing chamber, the heat retaining tube surrounds a boat with the semiconductor wafers mounted thereon. After the...     

A plasma treating apparatus includes an electrostatic chuck constructing an electrically conductive layer and insulating layers having the conductive layer sandwiched therebetween. A RF current supplied to a susceptor is prevented from flowing into the conductive layer of the chuck so as to suppress...     

A rapid thermal processor for heat treating and cooling semiconductor material in an elongated process chamber having a base, side and top walls which enclose a heater plate assembly through which thin pins longitudinally move to carry workpieces vertically to and from the heater assembly. A cooling...     

A conical rapid thermal processing system includes a conical thermal radiation reflector and a plurality of elongated radiant heating sources within the conical thermal radiation reflector. The elongated radiant heating sources pass through an imaginary conical surface within the conical thermal radiation...     

The steady state operating parameters of a low pressure chemical vapor deposition process for making diamond, i.e., nucleation-growth and graphite removal, are applied as controlled sequential steps to favor nucleation and growth.

A device for forming a deposited film is provided. It comprises (a) a reaction chamber; (b) a heating means for heating a substrate placed in the reaction chamber; (c) a starting gas introducing means for introducing starting gases into the reaction chamber, the gas introducing means having a means for...     

An apparatus is disclosed for coating an article with a coating material by vapor deposition wherein an improved deposition chamber having a base and a cover is employed. The cover of the deposition chamber is removable and interchangeable with other deposition chamber covers which have different sizes...     

A magnetron sputtering apparatus having a heating susceptor in a vacuum chamber to support a wafer. The wafer is fixed on a ring-shaped projection by clamps at wafer-mounted section on the top of the susceptor. A substantially closed space is formed between the underside of the wafer and that face on...     

Disclosed is a table top parylene deposition system wherein reactive monomer vapor enters a deposition chamber tangentially so as to create a rotational flow of vapor within the interior of the chamber. A substrate support fixture is positioned within the chamber and rotated in a direction counter to...     

A heat-treating apparatus comprises zones such as a carburizing zone, a cooling zone, and a nitriding zone, those zones are formed in series by partitioning a continuous passage through doors, and conveyance means for conveying an object along the passage. The cooling zone comprises a forced-feed cooling...