Wafer orientation system

4498833
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Inventors

Hertel, Richard J.

Application #

381286

Filed

May-24-1982

Published

Feb-12-1985

Current US Class

118/729
118/730
250/492.2
414/217
414/222.02
414/416.09
414/936
414/938
414/939

International Classes

B65H 001/00

Field of Search

414/217 414/222 414/225 414/226 414/417 414/737 414/749-752 414/590 414/754 414/589 118/50 118/500 118/729 118/730 198/382 198/384 198/389 198/394 406/87

Assignee

Varian Associates, Inc. (Palo Alto, CA)

Examiners

Spar; Robert J.

Attorney, Agent or Firm

Cole; Stanley Z., McClellan; William R.

US Patent References

3982627   Automatic wafer ori...
4062463   Automated single c...
4221533   Apparatus for trans...
4226569   Wafer loading and...
4242025   Palettizing-depalett...
4242038   Wafer orienting ap...
4264268   Apparatus for and...
4274802   Automated device
4282924   Apparatus for mec...
4299529   Automated device
4311427   Wafer transfer system
4407627   Automatic wafer ori...
4425075   Wafer aligners
4425076   Process and appar...
 

Referenced by:

View Backward References

Other References

Gruber, L. W. and Mustis, B.; Wafer Chuck Air Flow; IBM Technical Disclosure Bulletin; vol. 18, No. 6; Nov., 1975. Hoebener, K. G.; Multiple Size Chip Pickup and Placement Station; IBM Technical Disclosure Bulletin; vol. 22, No. 7; Dec., 1979. Chu et al., "Backscattering Spectrometry," Academic Press, New York, 1978, pp. 223-229.

Citation

Cite This Patent

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Abstract
Apparatus for programmably orienting a semiconductor wafer in an ion implantation system so as to limit channeling or to control the depth of penetration of impinging ions. The apparatus is associated with a processing chamber door and includes a rotatable vacuum chuck for engaging the wafer and a motor for rotating the vacuum chuck and the wafer through a preselected angular displacement. The apparatus further includes a programmable control assembly operative to deenergize the motor upon sensing rotation of the vacuum chuck through the preselected angular displacement. The wafer orientation apparatus is typically utilized in a system for the vertical transfer of wafers between a cassette and a processing chamber.
 
Claims
What is claimed is:

1. Apparatus for positioning a generally circular wafer in a wafer processing chamber, said apparatus comprising:

wafer handling means associated with an entrance to said wafer processing chamber for receiving said wafer and moving said wafer into said processing chamber, including a processing chamber door movable between an open position in which said wafer is received and a sealed position in which said wafer is sealed into said wafer processing chamber and means for moving said chamber door between said open position and said sealed position;

means associated with said wafer handling means for engaging said wafer and rotating same through a programmable, preselected angular displacement about an axis generally perpendicular to said wafer and centrally located thereon, including a rotatable vacuum chuck extending from the inside surface of said chamber door for receiving said wafer when said chamber door is in said open position and means for rotating said vacuum chuck and said wafer through said preselected angular displacement; and



Description
DESCRIPTION

BACKGROUND OF THE INVENTION

This invention relates to processing of semiconductor wafers and, more particularly, relates to a wafer handling system including apparatus for providing individual wafers with a preselected orientation relative to a treatment beam.

Ion implantation has become a standard technique for introducing impurities into semiconductor wafers in a controlled and rapid manner. A beam of ions is generated in a source and directed with varying degrees of acceleration toward the semiconductor wafer. The impurities are introduced into the bulk of semiconductor wafers by using the momentum of the ions as a means of embedding them in the crystalline lattice of the semiconductor material. In bombarding the semiconductor material, it is desirable to carefully control the depth of penetration of the impurity ions so as to control the characteristics of the semiconductor device being fabricated. One factor which determines depth of penetration is the kinetic energy of the impinging ions.
 
  A semiconductor device manufacturing unit in which plasma gas is maintained sealed in a quartz tube by a magnet disposed outside the quartz tube to make...  Target holder with mechanical scanning. The device comprises several target supports mounted on a plate, which rotates about an axis and means for displacing...