Multizone chamber

A device for coating a condensed metallic vapor onto a confined area of a substrate wherein the crucible producing the vapor is dimensionally stabilized and contains a variable aperature positioned relative to the vapor exit means of the crucible so as to provide a restricted line-of-sight path of travel...     

Multi-layer coating apparatus and system for coating a substrate having a coating chamber and means for advancing the substrate in a horizontal position through the coating chamber. The coating chamber is provided with means for depositing the coating on the bottom side of the substrate as it is advanced...     

Disclosed is a vapor deposition reactor comprising a series of individual gas cells respectively isolated from each other and containing a particular reactive or non-reactive gas required for one stage in a deposition process. Each cell is provided with an independent temperature control. A substrate...     

A method for decontaminating and subsequently metallizing a filament comprises: Passing the filament through the inner tube of a first chamber for decontamination which comprises two concentric tubes having an annular space therebetween, the inner tube of which has a series of fine holes therein; wherein...     

A processing apparatus for tissue specimens, e.g. for histological examination, comprises a vessel defining a vapor space above heating means and a receptacle for volatile processing liquid and, near the upper end of that space, means for condensing vapor in the upper part of the space and for returning...     

In a device and process for the deposition of pure semiconductor materials, specially silicon, by thermal decomposition of gaseous compounds of said semiconductor materials on carrier bodies heated to decomposition temperature, wherein the device consists of a silver plated base plate, mounting means...     

Apparatus for the chemical synthesis of an evaporant and a liquid has a cryogenic pumping device between the evaporant source and the reaction region and a pump causes the liquid to be continuously recirculated until the reaction is completed, the pressure in the evaporation region being maintained substantially...     

An apparatus and method are provided for fluidizing and vaporizing particulate solid coating reactants by first establishing a fluidized bed of dispersed particulant solid coating reactants and thereafter drawing a volume of fluidizing gas and suspended particulate solid coating reactant to a vaporizer...     

An apparatus for vacuum deposition of a thin film onto the surface of a substrate includes a vacuum container formed by a base plate, a cylindrical side wall and a top plate to accommodate at least four movable sealing caps each having a space adapted to confine a batch of substrates on a carrier of...     

A large scale vacuum deposition facility is disclosed in which substrates, in the form of architectural glass lights on supporting racks, are moved through an evacuated working chamber system where the substrates are coated by cathodic sputtering. The substrate racks are moved by a conveyor system through...     

A coating apparatus having a housing and a vacuum pump for establishing a vacuum in the housing. First and second rotors are disposed within the housing for rotation about axes which are offset from the horizontal by less than 45.degree. whereby the upper portions of the rotors are in relatively close...     

A device is disclosed for the formation of electric capacitor metal coatings and glow polymerization coatings to be applied in a vacuum installation in separate vacuum chambers. The air locks which are required between these vacuum chambers are designed to be particularly space saving by providing a...     

A high-pressure, high-temperature gaseous chemical apparatus particularly designed for oxidation of silicon wafers and providing for pressure equalization across the wall of the vessel providing the reaction chamber, for a water boiling enclosure within the reaction chamber and the injection of liquid...     

An improvement in the method of forming polymerization resists by directing high energy particles such as electron beams along a path across a vacuum chamber and onto polymerizable molecular species at a substrate surface with sufficient energy to polymerize the polymerizable molecular species in situ...     

A method is disclosed for fluidizing and vaporizing particulate solid coating reactants by establishing a fluidized bed of dispersed particulate solid coating reactants, drawing a volume of fluidizing gas and suspended particulate solid coating reactant into a vaporizer while mixing an additional volume...     

A method and apparatus for vacuum evaporating magnetic material onto a base. Cylindrical cans are disposed parallel to one another and rotated either in the same or opposite directions. A tape-shaped base is wound around the cans passing from an upper vacuum chamber to a lower vacuum chamber. A vacuum...     

A furnace (100) is provided which aids in the reduction of polysilicon and quartz contaminants during polysilicon deposition on monocrystalline wafers. The wafers are heated for polysilicon deposition within the interior of a quartz tube (102) which is mounted so that the interior sidewalls are vertical...     

A grooved passageway surface in a magnetic gas gate, the gas gate adapted to operatively connect two adjacent chambers, in the first chamber of which process gases are introduced for depositing a first layer upon a magnetic substrate and in the second chamber of which process gases are introduced for...     

A coating apparatus and method for coating industrial cutting and turning tools of any desired shape and configuration and the like significantly to improve the tools' working properties. The coating is formed of cubic boron nitride, with a preferred thickness not exceeding ten microns. The coating apparatus...     

A method of curing a wet catalyst-curable resin on a substrate in which the substrate is passed through a treating zone provided by a sealed vapor-curing chamber connected to sealed entrance and exit ante chambers at respective ends. The ante chambers are each separated from the vapor-curing chamber...     

An improved magnetic gas gate is adapted to operatively interconnect two adjacent chambers, in the first chamber of which process gases are introduced for depositing a first layer upon a magnetic substrate and in the second chamber of which process gases are introduced for depositing a second layer atop...     

A method and apparatus which permits photolysis of compounds without use of indows to permit unlimited growth of epitaxial layers. Epitaxial layers can include growth of crystals such as iron. A two section reactor chamber with a common opening between the sections is used for the internal production...     

A reduced capacitance electrode assembly for use in an alternating current plasma system provides reduced input capacitance to an associated tuning network. The assembly includes an electrode adapted to receive alternating current power for maintaining a plasma region and a plurality of electrically...     

A magnetic gas gate adapted to operatively connect two adjacent dedicated chambers, in the first chamber of which a first layer is deposited upon a magnetic web of substrate material and in the second chamber of which a second layer is deposited onto the first layer. The first chamber has introduced...     

Disclosed is a wafer handling device for a sputtering system where wafers, used in the manufacture of integrated circuits, are placed in a loading chamber, removed from the loading chamber and conveyed by a conveying device through a transportation chamber where they are individually picked from the...     

An external isolation module adapted to operatively interconnect at least one pair of a plurality of adjacent vacuum chambers through which a substrate travels and into which reaction materials are introduced. The external isolation module provides a passageway for the substrate between adjacent chambers...     

An apparatus for depositing metal or alloy films by a thermal decomposition process on a substrate includes a furnace having a number of selectively heated zones. The temperature of each zone is controllable so as to provide compensation for changes in the concentration of reactant materials in the different...     

To secure accurate control over rapid diffusion such as the diffusion of zinc into gallium arsenide, the source and slices to be processed are isolated from one another during an initial warm-up period. This is done using one vessel for the crystal slice and a second vessel for the source. The source...     

A chemical vapor deposition apparatus has a reactor divided into a reaction space and a purging space by a susceptor for supporting a wafer and a loading chamber communicated through a gate with the reactor. Exhaust units are communicated with the reactor and loading chamber, respectively, so that the...     

An upstream cathode system for use with glow discharge deposition apparatus, said apparatus adapted for the production of large area photovoltaic devices. In such apparatus, process gases are commonly introduced into a deposition chamber from a gas manifold disposed on the upstream side of a substrate....     

A gas is introduced into a surface treatment chamber and is activated therein. The surface of a specimen placed in the surface treatment chamber is treated by using reactive species generated by this activation. A means of supplying controllable energy such as the energy of heat, light, or electron beams...     

In a photochemical vapor deposition apparatus, a reaction space in which a substrate is to be placed and a discharge space adjacent to the reaction space, in which electric plasma discharge is generated for radiating ultraviolet rays which cause photochemical decomposition reaction of a photoreactive...     

In a photochemical vapor deposition apparatus comprising a reaction space, which forms a passage for a photoreactive gas and in which a substrate is to be placed, and a discharge space, in which electric plasma discharge is generated for radiating ultraviolet rays which cause photochemical reaction of...     

An apparatus for performing deposition on a substrate wherein the discharger is disposed in an outwardly protruding portion of the vacuum chamber. The discharger is positioned in this outwardly protruding portion so that it is isolated from the evaporation space and directed away from both the substrate...     

Vitreous optical fibers are useful in an expanding number of technologies. A process, corresponding apparatus, and a hermetically sealed fiber of the above nature are disclosed wherein high energy ionized plasmas are used in a continuous production of a coated vitreous optical fiber. Drawn fibers are...     

In a vacuum system for processing workpieces, a vacuum chamber has a workpiece-entrance opening. Load lock means for said entrance opening include a door for sealing the outside of said opening, a movable closure member within the chamber to seal the entrance opening from the interior of the vacuum chamber,...     

An improved chemical vapor deposition device having heating means substantially surrounding an inner deposition chamber for providing isothermal or precisely controlled gradient temperature conditions therein. The internal components of the chamber are quartz or similar radiant energy transparent material....     

A chemical vapor deposition device having uniformly distributed heating means substantially surrounding an inner deposition reaction chamber for providing isothermal or precisely controlled gradient temperature conditions therein, the reaction chamber being surrounded by the walls of an outer vacuum...     

In a method and apparatus for continuous plasma CVD deposition in and through a vacuum system, box carriers are provided to carry both the substrates and the plasma exciting electrodes through the system. Contamination of the system and cross doping of the applied coatings are reduced.

An improved process is disclosed for the deposition in a reactor vessel of silicon on the interior walls of the reactor vessel and for the subsequent separation of the silicon from those walls. The reactor vessel has a generally rectangular cross section and is formed of a refractory material from which...     

A conventional vapor phase deposition reactor tube typically formed of quartz is provided with a tubular liner supporting one or two crucibles carrying in turn one or two boats for holding constituents used for the deposition process. The liner, crucibles and boats are formed preferably of pyrolytic...     

A continuous, in-line deposition system is disclosed for coating large substrates. The apparatus includes loadlock chambers for loading and unloading substrates arranged in carriers. The carriers transport through the apparatus a plurality of pairs of substrates with their principal faces, that is faces...     

In a vapor deposition film forming apparatus having a plurality of reactors each having a substrate and an electrode oppositely arranged in a vacuum chamber and means for applying a voltage thereacross to react or decompose reaction gas introduced into the vacuum chamber, the reactors are arranged on...     

A vertical processor for the continuous deposition of semiconductor alloy material by glow discharge techniques. The vertical processor includes a plurality of operatively interconnected deposition chambers, at least one chamber of which includes a generally vertical cathode plate about each of the opposed...     

This invention relates to a new means, generally in kit form, for developing into a visible form fingerprints left on a solid surface, based upon the generation of a vapor-like phase of a cyanoacrylate material, alone or with functionally enhancing additives. This invention further relates to a process...     

Module for processing advancing substrates including an elongated housing enclosing pairs of superposed transporters defining a longitudinal passage; a source of pressurized gaseous transport medium communicating with the longitudinal passage, so as to provide a free floating transport of the substrates...     

A process and an apparatus for forming films, up to several microns in thickness, on substrates by the combination of ion implantation and vapor deposition; said apparatus comprising a vacuum chamber, means for transporting a substrate within the vacuum chamber, a first ion source having an accelerating...     

In a dry-processing apparatus adapted for vapor phase deposition or vapor phase etching, the processing space in its processing chamber is covered with a cooled member provided for trapping reflecting active particles and preventing degassing, thereby permitting processing with gas of high purity substantially...     

Chemical vapor deposition on a semiconductor wafer is obtained in a plasma reactor having a plurality of lamps for radiantly heating the wafer. Calibrated temperature sensing means remote from the wafer is used to control the heating of the wafer. Gases are supplied by way of a plurality of tubes extending...     

An amorphous silicon film forming apparatus forms an amorphous silicon film on a substrate. The apparatus is provided with a sealed vessel whose inside space is defined as a reaction chamber. A gas inlet pipe for introducing a gas containing SiH4 into the reaction chamber is connected to the vessel....     

A process and apparatus for depositing a high-quality metallic coating on a steel strip. In this process, one or several metals or metal alloys are continuously evaporated in a thermal plasma from nonoxidizing gas and transformed into the highly ionized state of the thermal plasma. Subsequently, the...     

A vacuum processing apparatus for applying a vacuum working process to a substrate to be processed by a plurality of processing steps comprises vacuum containers exclusively for use for processing disposed in place for each of the processing steps, and a vacuum container exclusively for use for conveyance...     

A chemical vapor deposition reactor for deposition on substrates, for example silicon epitaxial depositions. The apparatus includes a heating chamber in which a reactor is placed. Means of heating the substrates in the reactor is spaced from the reactor. The reaction chamber is positioned in the heating...     

There is disclosed a plasma CVD apparatus for depositing a film on a substrate by creating a discharge between the substrate and an electrode arranged to face the substrate, wherein the electrode is constructed by a plurality of hexagonal pillar electrodes arranged in a honeycomb structure.

A vacuum evaporation equipment for continuous vacuum evaporation of a metal onto a band or strip of product including at least one vacuum sealing station, provision of ducts that are disposed surrounding the band product and extending from the point of vapor deposition where the band product is subjected...     

A chemical vapor deposition epitaxial reactor (10) comprised of a quartz tube (12) with banks of IR lamp proximate the outside surface thereof. A splitter plate (30) located at the inlet of the tube (12) separates reactive gases and nonreactive gases directed longitudinally into the tube. The nonreactive...     

In a molecular beam epitaxy apparatus, the loading chamber for introducing the substrates is made separable from both the preparation chamber for cleaning the substrates and the growth chamber for forming thin films onto the respective substrates, so that the evacuation of the loading chamber is possible...     

An apparatus for forming a deposited film comprises a chamber, which can be brought into a reduced pressure, for forming a deposited film on a substrate by introducing a starting gas into said chamber and decomposing or polymerizing said gas, the apparatus is provided with both a means for decomposing...     

A vacuum metallizer comprises a vacuum chamber split into a number of sub-chambers by partitions. A material transport mechanism is disposed in one sub-chamber and metallizing sources in the others. Sub-chambers are individually pumped to provide close control of sub-chamber pressures. Sources are activated...     

An apparatus for the chemical vapor deposition on substrates of coatings comprising compounds of a titanium sub-group of metals, the vanadium sub-group of metals and the chromium sub-group of metals at temperatures in the range of 250.degree. to 850.degree. C. is disclosed. Sub-halides, such as TiCl.sub.3,...     

A chemical beam epitaxy system including a cylindrical vacuum chamber (32) with wafer heaters (42) affixed about the cylindrical wall, a rotatable wafer holder ring (40) with mounted wafer holders (38) adjacent the wafer heaters (42), and a central rotatble set of gas cells (44) for directing chemical...     

A chemical vapor deposition apparatus includes a gas mixing chamber and a water-cooled reaction chamber with adjustable water-cooled baffle between them. A wafer is clamped face down to a chuck and an inert gas such as helium is forced between the chuck and the wafer to insure proper heat conduction...     

Method and apparatus for the coating of a substrate wherein the following chronologically takes place under vacuum conditions: (i) non-oxidized plating material is deposited on the substrate via ion vapor deposition; and (ii) a coating material is chemically bonded with the non-oxidized plating material....     

A passageway which includes an annular region, the passageway adapted to isolate the gaseous contents of one of a pair of adjacent, vacuumized environments from the other of the pair while providing for the movement of a substrate therebetween.

Vacuum pumping system comprises a plurality of vacuum processing vessels, semiconductor processing reactors, and the like, connected to a common manifold evacuated by a generously large central vacuum unit. The manifold is maintained at a substantially constant designated pre-set pressure higher than...     

The present apparatus has a movable table with apertures therein. In each aperture there is loaded a carrier device and each carrier holds a substrate to be coated. The carriers are advanced in a step-like fashion to a loading position under a vertical hollow cylinder. When a carrier is in the loading...     

An improved radially designed gas manifold is disclosed for the precise mixing and admission of a plurality of gases into a processing chamber, and being characterized by rapid switching from one gas to another or from one set of gas mixture to another set of gas mixture, and yet occupying a minimum...     

A gas distributor beam includes a plenum and distribution slot surrounded by a generally V-shaped cooling fluid chamber. The circulation of a suitable cooling fluid tends to maintain the plenum and distribution slot at a temperature below four hundred degrees Fahrenheit for the distribution of diborane...     

Chemical vapor deposition apparatus has a quartz envelope supporting a resistance heater. A boron nitride pill box configured core supports resistance heater windings. The core has a base having a cylindrical upper portion defining a hollow chamber and an upper annular ring. A circular top includes an...     

A system for moving and processing workpieces includes individual stations isolated from one another and from a main chamber by seals formed by a transport mechanism. Workpieces are moved in a queue in a circular pattern, by a dial turret operated by a bell-crank and a Geneva mechanism. Stations seal...     

There is disclosed an apparatus for forming deposited film which forms deposited film on a substrate by introducing a gaseous starting material for formation of deposited film and a gaseous oxidizing agent having the property of oxidation action for said gaseous starting material through separate routes...     

An integrated plasma desmearing and plated-through-hole apparatus for first plasma desmearing a printed circuit board and then plating through the holes of the plated circuit board by sputtering. The apparatus comprises a plurality of vacuum chambers serially interconnected together. Preferably, five...     

The present apparatus includes a rotating table which is loaded with removable carriers, each of which holds a substrate to be coated. The carriers are advanced to a loading position and are pushed from the table thereat into a hollow cylinder. Each carrier has a pair of O-rings on its periphery which...     

In a molecular beam epitaxy apparatus in accordance with the present invention, transfer means for transferring substrates, which have been transferred from an introduction chamber, to a growth chamber and for transferring the substrates after the growth of a film, which have been transferred from the...     

An apparatus for coating substrates in a vacuum chamber has a cathode system, which is preceded and followed by evacuable isolating chambers. The individual chambers can be separated from one another by locks, and the apparatus has a conduit leading into the coating chamber for feeding one or more process...     

A process for forming a film, characterized in that, in forming a film by glow discharge decomposition, one or more electrode pair rows each consisting of a plurality of high frequency electrode pairs are arranged in a line and in parallel and substrates are arranged on both sides of said electrode pair...     

A substrate processing apparatus includes input and output chambers for loading and unloading substrates into and out of the apparatus, a separation chamber connected to the input and output chambers, a plurality of substrate processing chambers connected to the separation chamber for processing the...     

An improved semiconductor processing is disclosed. In the manufacturing process, fluorine gas is introduced just after formation of semiconductor layer in a reaction. The semiconductor thus formed demonstrates SEL effect in place of Staebler-Wronski effect.

This invention discloses a system for chemically depositing various materials carried by a reactant gas onto substrates for manufacturing semiconductor devices. The system includes special loading and unloading sub-system for placement of substrates to be processed into the system and subsequent extraction...     

A photo-CVD (chemical vapor deposition) apparatus is disclosed, in which at least two light transmission plates are used and the light from a light source is introduced into a gas reaction chamber through one of light transmission plates inserted into the chamber to cause the reactions in a reaction...     

A processing apparatus and method which permits sputter deposition and which is compatible with a vacuum processing system wherein the wafers are largely transferred and processed in the face down position. This includes an additional wafer movement, wherein, after a wafer has been emplaced face down,...     

A system for the simultaneous deposition of different coatings onto a thin web within a large volume vacuum chamber is disclosed which chamber is provided with a plurality of deposition chambers in which the different layers are deposited onto the film as its moves from a supply roll to a finished take-up...     

An vacuum evaporating apparatus for depositing thin films on a substrate comprises a vacuum tank, a hot-wall furnace for heating and evaporating a material to be evaporated, an auxiliary vacuuming means connected to the vacuum tank through a gate valve, a substrate exchanging mechanism for an evaporated...     

In an apparatus for the coating of bands on both sides with zinc in a vacuum, consisting of a housing (32) surrounding a coating chamber (28) and a winding chamber (45), a removable cover disposed on at least one side of the housing (32) for the hermetic closure of the coating chamber and winding chamber...     

A system for the simultaneous deposition of different coatings onto a thin web within a large volume vacuum chamber is disclosed which chamber is provided with a plurality of deposition chambers in which the different layers are deposited onto the film as its moves from a supply roll to a finished take-up...     

A photo chemical reaction apparatus comprises a vacuum container partitioned into a reaction chamber and a carrier chamber by use of partition board. The partition board has an opening into which a carrier tray can be detachably inserted so as to cause the rection chamber to be hermetically sealed. The...     

A surface treatment apparatus comprising a vacuum chamber, means for introducing a gas into the vacuum chamber, a gas furnace for heating and activating the gas while it is being introduced, apertures for injecting the heated gas, and a substrate stage for holding a substrate of which the surface is...     

A plasma apparatus which is; provided with a pair of plasma generation chambers at both sides of a specimen chamber provided therein with two specimen mounts for fixing specimens to be subjected to the predetermined processing such as plasma CVD; designed to use the specimen chamber in common so as to...     

A reactive ion etching apparatus includes first and second reactive chambers in a single buffer room. First and second stages are placed in front of corresponding reactive chambers. The centers of the reactive chambers and stages form a square. A first transfer arm transfers a wafer between the first...     

A vacuum apparatus comprising a substrate setting disc which is arranged in a conveyance chamber and on which substrates are placed, a drive system which drives and rotates the disc, a cam which is fixed to the disc, switching means to switch signal circuits through the cam, calculation means to receive...     

A vapor phase reaction apparatus includes a reaction chamber defined by first and second walls fixed opposite each other. Third and fourth walls are introduced into the reaction chamber already having affixed to them a substrate for deposition. A reactive gas is introduced into the reaction chamber for...     

A molecular beam epitaxy apparatus comprises a growth chamber provided therein with a holder support frame and connected via a first gate valve to a preparation chamber which in turn is connected to a loading chamber via a second gate valve. A first transfer tray arranged in the loading chamber receives...     

The synthesis of hydride compounds by reacting both the ingredients of the compound and the hydrogen together in the presence of energy sufficient to ionize the hydrogen. An inert bombardment ingredient enhances efficiency. In situ generation of ingredients such as arsine is provided within the reactor...     

An integrated modular multiple chamber vacuum processing system is disclosed. The system includes a load lock, may include an external cassette elevator, and an internal load lock wafer elevator, and also includes stations about the periphery of the load lock for connecting one, two or several vacuum...     

Apparatus for continuously producing semiconductor films on substrates in a vacuum chamber. A plurality of reaction chambers are provided within the vacuum chamber, substrates are supported by a top plate and transferred to each reaction chamber, which are filled with a certain reactant gas mixture while...     

A device (24) for handling semiconduct wafers in a vacuum which includes a wafer-receiving arm (80) located in a vacuum chamber and an operating shaft (76) which extends from the vacuum chamber into an atmospheric chamber. The shaft is driven in an axial direction by means of a motor-driven ball screw...     

A transportation system including a solar energy collecting monorail structure formed with a photovoltaic surface layer having a solar energy convertor for converting the collected solar energy to electrical energy. A power distribution device for distributing stored energy to transit vehicles being...     

A vacuum-tight wafer carrier, and a load lock suitable for use with this wafer carrier. The wafers are supported at each side by a slightly sloping shelf, so that minimal contact (line contact) is made between the wafer surface and the surface of the shelf. This reduces generation of particulates by...     

The present invention relates to an apparatus for producing semiconductors utilizing vacuum chemical epitaxy (VCE) method. Said VCE method has a high utilization efficiency of reactant gas and can finish the surface of a semiconductor layer formed on the surface of a substrate smoothly in comparision...     

In apparatus for transporting semiconductor wafers, a spatula contains a single major recess for receiving a wafer. Adjacent one edge of the recess is a shoulder for locating the wafer in the sequence of operations for loading the spatula. As a result of the sequence, the center of the wafer is held...