Apparatus for coating cap-shaped substrates

5324361
Add to folder: View Folders  
Keywords to Highlight:

full-text

print

pdf

permalink

Inventors

Etzkorn, Heinz-Werner
Krummel, Harald
Weidmann, Gunter
Paquet, Volker

Application #

900716

Filed

Jun-18-1992

Published

Jun-28-1994

Current US Class

118/715
118/719
118/723ME
118/723MW
118/733

International Classes

C23C 016/50

Field of Search

118/715 118/719 118/723 427/237

Assignee

Schott Glaswerke (Mainz, DE)

Examiners

Breneman; R. Bruce

Attorney, Agent or Firm

Millen, White, Zelano & Branigan

US Patent References

4148275   Apparatus for gas...
4539934   Plasma vapor dep...
4545328   Plasma vapor dep...
5154943   Plasma CVD proce...
5176924   Apparatus for plas...

Referenced by:

View Backward References

Citation

Cite This Patent

More From Subclass 719

4590024   Silicon deposition p...
5470389   Apparatus for form...
4624214   Dry-processing app...
6491802   Magnetic film form...
4403002   Vacuum evaporati...
4664062   Apparatus for man...
6270581   Wet-oxidation appa...
6344084   Combinatorial mol...
4795299   Dial deposition and...
4725204   Vacuum manifold...
6286452   Sputtering apparatus
5336325   Enhanced vertical t...
 

More From Class 118

5482559   Heat treatment boat
4890573   System for applyin...
7043148   Wafer heating usin...
5026454   Vacuum evaporatio...
4716916   Vehicle cleansing
4526128   High-speed indexi...
5238499   Gas-based substrat...
6861620   Ceramic heater
5359148   Heat-treating appar...
6375745   Mobile cellular tu...
5474641   Processing method...
4844003   Hot-melt applicator
 
Abstract
To coat several cap-shaped substrates simultaneously in an economical way with the same and high quality, several coating chambers are connected into a cap coating station by a symmetrical gas line system with a common gas generator and by another gas line system with a common vacuum pump. The gas lines have a cross sectional area Q.sub.A (x) and a cross sectional form Q.sub.F (x) which as a function of the distance x from the gas generator or from the vacuum pump are substantially the same. In this way, the same flow conditions are assured in all coating chambers. The gas line systems can be formed by precision pipes or by a stack of solid plates, in which gas ducts are introduced by boring or milling. Several cap coating stations, which are connected by suitable symmetrical gas line systems with a common vacuum pump and a common gas generator, can be combined to form a unit.
 
Claims
What is claimed is:

1. An apparatus for coating the inner surface of at least one cap-shaped substrate having a domed portion and edge with a dielectric layer system to form reflectors with a cold light mirror coating, the apparatus including a coating chamber which is formed by the cap-shaped substrate and a receiver part assembled with the layer system and connected gastight in sealing engagement with the edge of the cap-shaped substrate, the apparatus further including a gas intake duct and a gas exhaust duct connected to the coating chamber and a displacer (51) having one or more ducts to configure the gas layer to be reacted, the gas layer being reacted upon creating a plasma zone in the gas layer upon being excited with microwave energy; wherein the apparatus is configured to coat a plurality of cap-shaped substrates by providing at least two coating chamber (12a, 12b, 12c, 12d) placed side by side to form at least one cap coating station (1), the cap coating station (1) being connected by gas lines to a gas generator (146) and a vacuum pump (90), both lines being common for all coating chambers (12a- d), the gas liens for the gas supply respectively forming a symmetrical gas line system (175, 95) in which a cross sectional area Q.sub.A (x) and a cross sectional, geometrical form Q.sub.F (x) of the gas lines as a function of any selected distance (x) from the gas generator (146) or from the vacuum pump (90) are substantially the same.



Description
BACKGROUND OF THE INVENTION

The invention relates to apparatus for coating the inner surface of cap-shaped substrates with a dielectric layer system. More particularly, the invention relates to coating the inner surface of reflectors with a cold light mirror coating by using a coating chamber which is defined by the cap-shaped substrate and a receiver part assembled with the dielectric layer system disposed proximate the edges and connected gastight thereto. Moreover, the invention relates to such apparatus wherein a gas intake duct and a gas exhaust duct are connected by a receiver. A displacer is used having one or more ducts to define the gas layer to be reacted, and a plasma zone is reacted in the gas layer by being excited. The invention also relates to a unit for coating cap-shaped substrates, in which several cap coating stations are placed side by side.

Coating devices of the above-described type are known from DE-OS 4008405 in which several caps are placed side by side in a grid for coating with a plasma pulse process on a bottom plate of a receiver. To keep the reaction volume as small as possible, the caps are sunk in suitable indentations in the bottom plate. The coverplate of the receiver is provided with an arrangement of displacers corresponding to the arrangement of the indentations in the bottom plate, which dip into the cavities limited by the inner surfaces of the caps to be coated. In the sidewalls of the receiver, several gas exhaust openings are provided, by which the reaction gases, depleted of laminate, can be suctioned off by a vacuum pump. This device has the drawback that the gas flow inside the receiver, on the one hand, is asymmetrical for each cap and, on the other hand, differs from cap to cap, so that, depending on the position of the cap inside the receiver, the coating can be different. Since the production tolerances do not permit an exact matching of the indentation to the cap shape, the caps are not completely supported, and a gap forms between the outside of the cap and the indentation. This can cause coating of the outside wall of the cap.
 
  In order to remove oxides produced as a result of natural oxidation, from a semiconductor wafer, the semiconductor wafer is transported into a preparatory...  An air lock system for the transfer of large containers into a containment comprises a set of horizontally and vertically slidable doors adapted to define...