Film forming apparatus

5482607
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Inventors

Hashimoto, Hajime
Kubota, Kazuo
Inoue, Daisuke
Nogawa, Syuichi

Application #

123225

Filed

Sep-20-1993

Published

Jan-9-1996

Current US Class

118/719
204/298.25

International Classes

C23C 014/34

Field of Search

204/298.25 204/298.35 204/192.12 118/719 414/217 414/222

Assignee

Nissin Electric Co., Ltd. (Kyoto, JP)

Examiners

Nguyen; Nam

Attorney, Agent or Firm

Finnegan, Henderson, Farabow, Garrett & Dunner

US Patent References

4388034   Processing apparat...
4595483   Cathode sputtering...
4820106   Apparatus for passi...
4857160   High vacuum proc...
4886592   Apparatus on the c...
4927484   Reactive ion etchin...
5019233   Sputtering system
5061356   Vacuum treatment...
5186594   Dual cassette load l...
5217501   Vertical wafer heat...
5223001   Vacuum processin...

Referenced by:

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Citation

Cite This Patent

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Abstract
A film forming apparatus includes a film forming chamber in which a film is formed on a substrate at a film forming position, a plurality of load lock chambers provided on the film forming chamber through gate valves respectively, a plurality of pivots provided in the film forming chamber correspondingly to the respective load lock chambers, and carrying arms supported by the pivots respectively so as to move the substrate from any one of the load lock chambers to the film forming position and contrariwise from the film forming position to any one of the load lock chambers.
 
Claims
What is claimed is:

1. A thin-film forming apparatus, comprising:

a film forming chamber in which a film is formed on a substrate; and

a load lock chamber provided on said film forming chamber through a gate valve, which is used to send said substrate into said film forming chamber,

wherein, when a volume of said film forming chamber is V1 liters, evacuated to a pressure P1 Torr, P Torr is a required pressure for film formation, and V2 liters is a volume of said load lock chamber, evacuated to a pressure P2 Torr, a relation between said volumes V1 liters and V2 liters satisfies the following expression:

(P1.times.V1+P2.times.V2)/(V1+V2).ltoreq.6.times.10.sup.-5 Torr.



Description
BACKGROUND OF THE INVENTION

The present invention relates to a film forming apparatus such as an ion-beam sputtering apparatus in which a device of holding a substrate such as a disk in a film forming chamber and a device of delivering a substrate are improved, the quantity of treatment per unit time (throughput) is improved, an outside line of carrying a substrate is simplified, and the deposition of film in a load lock chamber is prevented.

A conventional film forming apparatus is configured as shown in FIG. 1 which is a schematic plan view of the apparatus. In this drawing, reference numeral 41 designates a film forming chamber in which a film is formed on a disk 43 located at a film forming position 42; 44, two load lock chambers provided with their one sides disposed adjacent to the film forming chamber 41 through inner square gate valves 45; 46, outer square gate valves provided on the other sides of the respective load lock chambers 44; 47, pivots uprightly provided in the respective load lock chambers 44; 48, carrying arms supported by the respective pivots 47; and 49, an exchange position at which a disk 43 is mounted or demounted.
 
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