Apparatus for manufacturing semiconductors

4664062
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Inventors

Kamohara, Hideaki
Fujioka, Kazumasa
Kobari, Toshiaki
Takahashi, Kunihiro
Ueda, Shinjiro

Application #

792195

Filed

Oct-28-1985

Published

May-12-1987

Current US Class

118/719
118/723R
118/725
118/729
118/733

International Classes

C23C 014/02; C23C 014/56

Field of Search

118/719 118/733 118/723 118/725 118/729 118/50.1 118/900

Assignee

Hitachi, Ltd. (Tokyo, JP)

Examiners

Lawrence; Evan K.

Attorney, Agent or Firm

Antonelli, Terry & Wands

US Patent References

4201152   Transfer and temp...
4498416   Installation for treat...

Referenced by:

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Citation

Cite This Patent

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Abstract
In a molecular beam epitaxy apparatus, the loading chamber for introducing the substrates is made separable from both the preparation chamber for cleaning the substrates and the growth chamber for forming thin films onto the respective substrates, so that the evacuation of the loading chamber is possible even when the loading chamber is separated from the apparatus, thus improving the productivity thereof.
 
Claims
What is claimed is:

1. A molecular beam epitaxy apparatus comprising: preparation chamber means for subjecting substrates to a cleaning treatment; growth chamber means for forming thin films onto the respective substrates by means of an epitaxial growth process; loading chamber means for introducing from an atmospheric environment a predetermined number of the substrates and temporarily holding the same therein; transfer chamber means for transferring the substrates from said loading chamber means to said preparation chamber means and from said preparation chamber means to said growth chamber means; mounting means provided between said transfer chamber means and said loading chamber means for dismounting said loading chamber means from said transfer chamber means when all the substrates introduced into said loading chamber means are transferred to said transfer chamber means and for remounting said dismounted loading chamber means to said transfer chamber means when the predetermined number of substrates are newly introduced into said dismounted loading chamber means; and exhaust port means provided in said loading chamber means for evacuation thereof.



Description
BACKGROUND OF THE INVENTION

This invention relates to an apparatus for manufacturing semiconductors, and more particularly to a Molecular Beam Epitaxy (MBE) apparatus with improved productivity.

Heretofore, there has been known a MBE apparatus of the type having an loading chamber, a transfer chamber and a growth chamber, wherein the loading chamber is connected to the transfer chamber through a vacuum connection such as gate valves for taking substrates into the apparatus from the outside atmosphere. The transfer chamber is disposed between the loading chamber and the growth chamber for transferring the substrates to the last mentioned chamber in which a thin film is formed on the surface of each substrate. Also, there has been known another type of MBE apparatus, for instance as disclosed in U.S. Pat. No. 4,201,152, in which no transfer chamber is provided and thereby its loading chamber is connected to a growth chamber through gate valves. In the MBE apparatus having either construction described above, however, the utilization efficiency of each portion thereof is low, for example, because the loading chamber is not used for a relatively long period of time when the growth chamber is used to form a thin film on the surface of each substrate and that evacuation of the loading chamber is commenced after the substrates have been introduced into the chamber, and thus no consideration has been given to the productivity of the apparatus.
 
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