Molecular beam epitaxy source cell

5714008
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Inventors

Lee, Myung B.
Vanhatalo, Jari

Application #

639641

Filed

Apr-29-1996

Published

Feb-3-1998

Current US Class

117/108
118/715
118/719
118/726

International Classes

C23C 016/00

Field of Search

117/200 117/201 117/202 117/900 118/715 118/719 118/726

Assignee

Northrop Grumman Corporation (Los Angeles, CA)

Examiners

Garrett; Felisa

Attorney, Agent or Firm

Anderson; Terry J., Hoch, Jr.; Karl J.

US Patent References

4181544   Molecular beam m...
4239955   Effusion cells for m...
4518846   Heater assembly fo...
4622083   Molecular beam e...
4640720   Method of manufac...
4646680   Crucible for use in...
5041719   Two-zone electrical...
5080870   Sublimating and cr...
5122393   Reagent source for...
5336324   Apparatus for depo...
5415128   Rotation induced s...
5433791   MBE apparatus wit...
5540780   Molecular beam e...
 

Referenced by:

View Backward References

Other References

Anderson et al., Materials Science 4th Ed., Chapman & Hall, New York, 1990, pp. 464-466.

Citation

Cite This Patent

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Abstract
Apparati and methods for varying the flux of a molecular beam emanating from an effusion cell are disclosed. The apparatus includes a means for controllably adjusting the angular distribution of a molecular field effusing from a source material within the effusion cell, therein adjusting the flux of the beam. The method herein disclosed, with respect to the related apparati, including the step of selectively altering the angular distribution of an effusing molecular field, produced by a heated source material, which comprises the molecular beam, thereby varying the flux of the beam.
 
Claims
What is claimed is:

1. A molecular beam epitaxy source cell having a rapidly and controllably varying flux, comprising:

a crucible element including a sealed base, side walls, and an opening, having a quantity of source material disposed therein;

at least one heating element for raising the vapor pressure of the source material, thereby causing effusion of the source material;

a translatable conical section defining an orifice, interposed between the source material and said opening of the cell, slideably mounted within the crucible element; and

means for selectively translating the conical section with respect to the effusing source material,

whereby translation of the traveling orifice alters the angular distribution of effusing material which emanates from the cell, thereby controllably varying the flux emanating from the cell.



Description
BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to apparati and methods for controlling constituent mass densities within molecular beams, and more particularly to apparati and methods for rapidly varying the flux rate of epitaxial materials from effusion cells during the fabrication of semiconductor devices.

2. Description of Prior Art

Molecular beam epitaxy techniques which permit growing epitaxial layers have been described, and are well known in the art. In a typical molecular beam epitaxy (MBE) system, two or more source materials (generally a semiconductor material and at least one dopant material) are separately heated in effusion cells, thereby elevating their vapor pressures, to generate individual beams consisting of molecules (or atoms) of these materials. The individual beams of molecules then travel under molecular flow conditions toward the surface of a heated substrate where they react to deposit layers of predetermined composition on the substrate surface. The term "molecular flow" is herein used to refer to such flow conditions in which individual molecules move without undergoing direction altering collisions. Such conditions are most practically maintained in an evacuated environment, thus MBE is generally carried out in vacuum chambers.
 
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