Photo-CVD apparatus

4836140
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Inventors

Koji, Masashi

Application #

245936

Filed

Sep-16-1988

Published

Jun-6-1989

Current US Class

118/50.1
118/620
118/715
118/719
118/722

International Classes

C23C 016/00

Field of Search

118/715 118/719 118/722 118/723 118/50.1 118/620

Assignee

Hoshin Kagaku Sangyosho Co., Ltd. (Tokyo, JP)

Examiners

Bueker; Richard

Attorney, Agent or Firm

Bauer & Schaffer

US Patent References

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4503807   Chemical vapor de...
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Referenced by:

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Citation

Cite This Patent

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Abstract
A photo-CVD (chemical vapor deposition) apparatus is disclosed, in which at least two light transmission plates are used and the light from a light source is introduced into a gas reaction chamber through one of light transmission plates inserted into the chamber to cause the reactions in a reaction gas to thereby deposit a thin film or layer on a substrate located in the gas reaction chamber. In this case, a light transmission plate polluted by the reaction gas is moved to the outside of the chamber, then washed or exchanged with a new one manually or automaticaly while a clean one is inserted into the chamber, so that the photo-CVD process can be carried out continuously without interrupting the irradiation of the light from the light source.
 
Claims
I claim as my invention:

1. A photo-CVD (chemical vapor deposition) apparatus comprising:

(a) a gas reaction chamber accommodating therein a substrate and through which a reaction gas flows, said gas reaction chamber having a gate opening in one wall thereof;

(b) a light source communicating with said reaction chamber through said gate opening and for emitting a light to said substrate to cause a reaction in said reaction gas in said gas reaction chamber,

(c) at least two light transmission plates;

(d) means for carrying said light transmission plates;

(e) means for indexing said carrying means between a first position with said gas chamber such that one of said light transmission plates is inserted into said gas reaction chamber to close in air-tight manner said gate opening while permitting said light source to pass into said gas reaction chamber to irradiate said substrate and a second position such that at least one of the other of said light transmission plates is exterior of said gas reaction diameter; and



Description
BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates generally to a photo-CVD (chemical vapor deposition) apparatus and, more particularly, is directed to a photo-CVD apparatus utilizing a light and a reaction gas to deposit a thin film on a substrate.

2. Description of the Prior Art

FIG. 1 is a partially cross-sectional view illustrating one example of a prior art photo-CVD apparatus of this kind that is disclosed in Japanese laid-open patent application No. 60-53016.

Referring to FIG. 1, there is provided a gas reaction chamber 1 within which a substrate (sample) 2 on which a thin film is to be deposited by the photo-CVD process is supported on a susceptor 3. Upon operation, the substrate 2 is heated by a heater 4. Specifically, a light source 5 which irradiates, for example, ultraviolet rays is located within a light source compartment 6 that is formed on the gas reaction chamber 1. The ultraviolet rays from the light source 5 irradiate the substrate 2 through an ultraviolet ray transmission plate 7 which tightly shields a window opening 7A formed through the gas reaction chamber 1. The reaction gas is introduced through a gas opening 8 to the gas reaction chamber 1 and exhausted to the outside through a gas exhausting opening 9.
 
  This invention discloses a system for chemically depositing various materials carried by a reactant gas onto substrates for manufacturing semiconductor...  A processing apparatus and method which permits sputter deposition and which is compatible with a vacuum processing system wherein the wafers are largely...