Sputtering apparatus

6286452
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Inventors

Namiki, Shigeru
Kawa, Hidetoshi

Application #

450176

Filed

Nov-29-1999

Published

Sep-11-2001

Current US Class

118/719
118/723E
118/723R
204/192.12
204/298.01

International Classes

C23C 016/509

Field of Search

204/192.38 204/192.12 204/192 118/719 118/723 156/345 156/643 414/225 414/222

Assignee

Matsushita Electric Industrial Co., Ltd. (Osaka, JP)

Examiners

Mills; Gregory

Attorney, Agent or Firm

Price and Gess

US Patent References

4410407   Sputtering apparat...
4632719   Semiconductor etch...
4718975   Particle shield
4836733   Wafer transfer system
4909695   Method and appar...
5130005   Magnetron sputter...
5215640   Method and arran...
5252194   Rotating sputtering...
5267607   Substrate processin...
5284561   Method and appar...
5387326   Method and arran...
5417798   Etching method
5427670   Device for the treat...
5540821   Method and appar...
5556500   Plasma etching ap...
5626677   Atmospheric pressu...
5772770   Substrate processin...
5863170   Modular process sy...
5904778   Silicon carbide co...
5972116   Method and appar...
 

Referenced by:

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Abstract
The chamber 1 of the spattering apparatus has a gas introduction port 2 provided at one side in a direction orthogonal to the opening/closing direction of a door 11 of chamber 1, and a vacuum evacuation port 3 provided on the other side of chamber. A substrate holder 4 is fixed on door 11, and a cathode 31 is arranged on a wall face facing door 11 of chamber 1. A shield 41 is arranged in close proximity to and so as to cover the peripheral part of substrate holder 4. A hole 42 is formed in shield 41 in a location facing vacuum evacuation port 3, whereby rapid vacuum evacuation can be achieved even though shield 41 is arranged in a condition close to sealing with respect to the peripheral part of substrate holder 4.
 
Claims
What is claimed is:

1. A sputtering apparatus comprising:

a chamber having a door;

a gas introduction port for introducing a gas into the chamber to enable deposition of a material, the gas introduction port is provided on one side in a direction orthogonal to the direction of opening and closing of the door of the chamber;

a vacuum evacuation port provided on an opposite side from the gas introduction port of the chamber;

a substrate holder provided on the door of the chamber with a rotary mechanism;

a cathode provided on a wall face of the chamber facing the door of the chamber and arranged offset to the gas introduction port with respect to the substrate holder;



Description
BACKGROUND OF THE INVENTION

1. Technical Field of the Invention

The present invention relates to a sputtering apparatus whereby film deposition is performed in vacuum on to a semiconductor wafer or disk such as a CD or DVD.

2. Description of Prior Art

An example of a prior art sputtering apparatus disclosed in Japanese Laid-Open Patent Application No. 7-102366 will be described with reference to FIG. 7. In FIG. 7, a substrate 60 is mounted on a substrate holder 63 which is arranged fixed to a door 62 of chamber 61, and a cathode 64 is arranged so as to face substrate holder 63. A shutter plate 65 is arranged in a retractable manner between substrate holder 63 and cathode 64. A sputtering power source 66 applies voltage to cathode 64. A vacuum evacuation port 67 is provided on one side of chamber 61 and a gas introduction port 68 is provided on the other side for introducing sputtering gas. An earth shield 69 is arranged around cathode 64, and a shield 70 is provided such as to surround the peripheral part of substrate holder 63.
 
  In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction...  The present invention generally provides a rotary wafer carousel and related wafer handler for moving wafers or other workpieces through a processing system,...