Thin film coating and method

5154810
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Inventors

Kamerling, Marc A.
Beauchamp, William T.
Klinger, Robert E.
Lehan, John P.

Application #

647660

Filed

Jan-29-1991

Published

Oct-13-1992

Current US Class

118/712
118/719
118/730
136/256
204/192.13
204/192.26
204/298.03
204/298.26
427/126.3
427/126.4
427/8
438/61
438/7
438/907

International Classes

C23C 014/54; H01L 031/18

Field of Search

204/192.13 204/192.22 204/192.23 204/192.26 204/298.03 204/298.26 427/8 427/74 427/126.3 427/126.4 118/712 118/719 118/730 437/2-5 136/256

Assignee

Optical Coating Laboratory, Inc. (Santa Rosa, CA)

Examiners

Weisstuch; Aaron

Attorney, Agent or Firm

Dalton; Philip A.

US Patent References

4320155   Method for coating...
4851095   Magnetron sputteri...

Referenced by:

View Backward References

Other References

C. D. Adams et al., Conference Record, 19th IEEE Photovoltaic Specialists Conf. (1987), pp. 469-474.

Citation

Cite This Patent

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Abstract
A system and process for forming optical quality, protective, relatively thick, thin film coatings on workpieces such as detectors or solar cells. The apparatus includes a rotary cylindrical sputtering system which incorporates separate deposition devices and at least one chemical reaction device for simultaneously (1) depositing materials which form tensile and compressive oxides and (2) oxidizing the deposited materials. The system also includes a stressometer system, preferably a cantilevered beam stressometer system which monitors the stress of the depositing film in-situ. The monitored stress levels are used to control the relative amounts of compressive and tensile materials which are deposited and, thus, control stress in the thin film coatings. In a preferred embodiment for forming protective covers on solar cells, the deposition devices are linear magnetron sputter cathode devices having silicon and aluminum targets, and the reaction device is a linear magnetron ion source oxidizer device. Film stress in the thin film coating is controlled by controlling power to the silicon and aluminum targets.
 
Claims
We claim:

1. A physical vapor deposition process for forming a coating on a substrate, comprising: simultaneously depositing and oxidizing at least two materials on the substrate to form a thin film coating thereon, said materials being selected from at least one material which imparts compressive force characteristics to the coating and at least one material which imparts tensile force characteristics to the coating; monitoring the stress in the coating during formation thereof; and, responsive to the monitored stress, adjusting the relative deposited amount of said materials as they are being deposited to control the stress in the coating as it is being formed.

2. A process for forming a coating on a substrate, comprising: providing drum means adapted for mounting substrates thereon; rotating the drum means to rotate the substrate past circumferential work stations; using deposition devices adjacent the circumference of the drum, depositing onto the substrates at least a first material which imparts tensile force characteristics to the substrates and at least a second material which imparts compressive force characteristics to the substrates; oxidizing the materials as they are deposited; using a cantilever beam stressometer system which includes a cantilever reflector means mounted on the drum, monitoring the stress levels of the coating in-situ as it is formed; and responsive to the monitoring stress, controlling the amount of compressive and tensile materials as they are being deposited on the substrate to control the stress in the coating.



Description
CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is related to of commonly assigned U.S. patent application Ser. No. 604,362, filed Oct. 26, 1990, which is a continuation of commonly assigned U.S. patent application Ser. No. 490,535, filed Mar. 5, 1990, now abandoned, which is a continuation of commonly assigned U.S. patent application Ser. No. 374,484, filed Jun. 30, 1989, now abandoned, which is a continuation of commonly assigned U.S. Pat. No. 4,851,095, entitled MAGNETRON SPUTTERING APPARATUS AND PROCESS, issued Jul. 25, 1989, to inventors Scobey, Seddon, Seeser, Austin, LeFebvre, and Manley from application Ser. No. 154,177 filed Feb. 8, 1988, which applications and patent are incorporated by reference.

BACKGROUND OF THE INVENTION

a. Field of the Invention

The present invention relates to thin film coatings and to physical vapor deposition methods for manufacturing such coatings. More specifically, our invention also relates to protective thin film optical coatings formed on, and/or which include, optical detectors and to methods of manufacturing such coatings. Still more specifically, our invention also relates to solar cells, protective thin film optical coatings for such cells, and to methods of forming such coatings.
 
  The sputtering apparatus for the present invention is used for manufacturing optical discs. On loading and unloading of disc substrates to and from a vacuum...  An improved vacuum vapor-deposition apparatus comprises an evaporation tank for holding and evaporating vapor deposition material, a hood covering the...