Method for stripping photolacquers

4070203
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Inventors

Neisius, Karl Heinz
Baumer, Wilhelm

Application #

631660

Filed

Nov-13-1975

Published

Jan-24-1978

Current US Class

134/3
134/38
252/364
257/E21.255
510/176
510/414

International Classes

B08B 003/08

Field of Search

134/3 134/38 252/143 252/144 252/171 252/364 252/DIG.

Assignee

Merck Patent Gesellschaft mit beschrankter Haftung (Darmstadt, DT)

Examiners

Bashore; S. Leon

Attorney, Agent or Firm

Millen & White

Referenced by:

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Citation

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Abstract
Hardened photolacquer on semi-conductors and integrated circuits for etching purposes are stripped therefrom employing, preferably at a temperature above 75.degree. C., a stripping composition consisting essentially of 20-50 weight percent of at least one alkylbenzenesulfonic acid of 12-20 carbon, and 80-50 weight percent of a chlorine-free, aromatic hydrocarbon having a boiling point above 150.degree. C.
 
Claims
What is claimed is:

1. In a method of stripping a hardened photolacquer etching mask from the surface of an etched electronic component substrate coated therewith by contacting the surface of the substrate with a stripping agent for the photolacquer which is free of metal ions, dust and high molecular weight and resinous impurities, the improvement wherein the stripping agent is a substantially impurity-free mixture of 20-50 weight percent of at least one alkylbenzenesulfonic acid of 12-20 carbon atoms and the remaining 80-50 weight percent of the mixture being a chlorine-free, aromatic hydrocarbon solvent having a boiling point above 150.degree. C.

2. A method according to claim 1 wherein the alkylbenzenesulfonic acid is one or more of octylbenzenesulfonic acid, nonylbenzenesulfonic acid or dodecylbenzenesulfonic acid.



Description
BACKGROUND OF THE INVENTION

This invention relates to stripping compositions for stripping hardened photolacquers from etched semi-conductors and integrated circuits and to a stripping process employing them.

In the production of semi-conductors and integrated circuits by controlled etching, the portion of the substrate which is not to be etched is, as a rule, protected by a layer of a hardened photolacquer. After the etching is completed, this etching mask must then be removed from the substrate. Stripping agents, also called strippers, are used to strip off the lacquer layer as quickly as possible and without mechanical stress to the substrate. They must be substantially free from impurities in order to avoid undesired doping effects on the substrate. Such stripping agents conventionally are a mixture of one or more surface-active compounds, at least one phenolic compound and one or more chlorinated hydrocarbons. For example, in U.S. Pat. No. 3,582,401, strippers are disclosed which consist of an arylsulphonic acid of the general formula: ##STR1## WHEREIN M IS 0, 1 OR 2; AT LEAST ONE PHENOLIC COMPONENT, SUCH AS; FOR EXAMPLE, PHENOL, A CRESOL, A XYLENOL OR A HALOPHENOL; AND AT LEAST ONE NON-AQUEOUS, HALOGENATED DILUENT WITH A BOILING POINT ABOVE 75.degree. C., for example, carbon tetrachloride, trichloroethylene, tetrachloroethylene or o-dichlorobenzene. Similar preparations containing a long-chained alkylbenzenesulfonic acids as the surface-active agent are also commercially available.
 
  Constant boiling binary admixtures are formed by 1,2-dichloro-1,1,2-trifluoroethane with trichlorofluoromethane, with diethyl ether, and with dichloromethane....  This invention relates to azeotropic compositions of 1,2-dichloro-1-fluoroethane or of 1,2-dichloro-1,2-difluoroethane with certain alcohols, ethers, or...