Rotary

An apparatus for continuously processing articles includes a pre-heating chamber for confining a vacuum therein provided with four openings by which an entrance chamber, two depositing chamber and an exit chamber communicate therewith individually. Each of the openings is provided with a gate valve mounted...     

Vacuum sputtering apparatus for treating articles having a housing forming a main vacuum chamber with a plurality of work stations therein. A lock chamber is provided in the main vacuum chamber through which articles can be inserted and removed. Means is provided in the main vacuum chamber for advancing...     

A planetary evaporator having at least one source of material for coating, by evaporation, workpieces such as semiconductor wafers. The apparatus includes a pallet mounted for rotation about its own axis, and substrate or workpiece holders mounted on the pallet which orbit said axis. Guides support the...     

The disclosure relates to apparatus for the deposition of epitaxial (semiconductor) layers by the vapor phase epitaxial growth technique wherein the carrousel for carrying substrate (semiconductor) slices onto which epitaxial deposition is to take place is arranged whereby, in accordance with the first...     

A metal coating is deposited upon the surface of a number of electronic circuit device wafers in an evacuated chamber by means of tooling that rotates the wafers about three different axes. A primary three-armed spider rotates about a primary axis and carries on each of its arms a four-armed secondary...     

Apparatus and process for vapor depositing epitaxial films on substrates. A gaseous reactant is introduced into a reaction chamber formed from a material, such as quartz, which is transparent and non-obstructive to radiant heat energy transmitted at a predetermined short wave length. A graphite susceptor,...     

An apparatus for chemically vapor-depositing a material onto surfaces of a plurality of substrates within a reaction chamber comprises means positioned within the chamber for supporting the substrates in a stack-like relationship wherein the surfaces are substantially parallel to each other and are separated...     

An apparatus for making metal films comprises an air tight chamber; a rotatable cylindrical cage to receive substrates therein, said rotatable cage constituting an anode; and cathode means of sputtering metal material disposed coaxially of said rotatable cylindrical cage. When a sputtering power source...     

A method and horizontal furnace for vapor phase growth of HgI.sub.2 crystals which utilizes controlled axial and radial airflow to maintain the desired temperature gradients. The ampoule containing the source material is rotated while axial and radial air tubes are moved in opposite directions during...     

An apparatus for plating work pieces including irregularly-shaped workpieces of various sizes with a technique known as ion vapor deposition wherein the articles are tumbled in adjacent counter-rotating barrels, a portion of which are cathodes of a high voltage system. The barrels rotate about generally...     

An apparatus for vacuum deposition comprising a turn-table for holding substrates for deposition, and a plurality of evaporation boats arranged in opposition to a circumferential part of the turn-table, the turn-table being rotated at deposition whereby vapors from the respective boats can be cyclically...     

A low-temperature, high-pressure, medium-power process, which utilizes a radio frequency powered radial flow reactor, utilizes only silane and ammonia as the reactant gases for deposition. The methods disclosed result in the deposition on semiconductor wafers of moderately high density silicon-nitrogen...     

A wafer support, comprising, a baseplate with an aperture therein and a hing ring rotatably positioned in the aperture. A platform is defined in the holding ring for supporting the peripheral edges of a wafer disposed therein and the holding ring includes a plurality of spaced slots extending parallel...     

This invention is directed to a vacuum metallizing process and, particularly, to an improved process for applying thin chromium coatings to the surface of both rigid and flexible plastic articles. The method includes securing a high purity chromium bar between spaced electrodes, mounting the articles...     

Vacuum apparatus for coating substrates by rotation including a vacuum chamber with an elongated material source having a longitudinal axis and a transverse axis, a substrate rack with a plurality of fastening points for the planar arrangement of a plurality of substrates above the material source in...     

The temperature of a substrate being coated by molecular beam epitaxial techniques is monitored during the deposition process. The substrate is mounted on a holder that is brought by a carriage to a treating station where the deposition occurs. At the station, a pair of metal contact pins selectively...     

A vacuum vapor-deposition apparatus comprising a turntable for holding some substrates subjected to vapor-deposition, on its circumferential portions; a plurality of evaporating boats disposed opposite to the circumferential portions of the turntable; a plurality of SCR boat power sources for respectively...     

An apparatus for vacuum deposition of a thin film onto the surface of a substrate includes a vacuum container formed by a base plate, a cylindrical side wall and a top plate to accommodate at least four movable sealing caps each having a space adapted to confine a batch of substrates on a carrier of...     

A coating apparatus having a housing and a vacuum pump for establishing a vacuum in the housing. First and second rotors are disposed within the housing for rotation about axes which are offset from the horizontal by less than 45.degree. whereby the upper portions of the rotors are in relatively close...     

A vertical type vapor-phase growth apparatus comprises a vapor-phase growth reactor constituted of an upper section defining an upper chamber having a lateral cross-section of about 200 cm.sup.2 and a lower section defining a lower chamber having a lateral cross-sectional area greater than, but smaller...     

A device is disclosed for the formation of electric capacitor metal coatings and glow polymerization coatings to be applied in a vacuum installation in separate vacuum chambers. The air locks which are required between these vacuum chambers are designed to be particularly space saving by providing a...     

An integral graphite susceptor of the barrel type comprising a hollow polyhedron arranged to support one or more semiconductor substrates on its outer planar wall surfaces. The substrates are supported in a novel column and row array in which each wafer is mounted on a wall surface portion that is related...     

A vertical type vapor-phase growth apparatus comprises a vapor-phase growth reactor constituted of an upper section defining an upper chamber having a lateral cross-section of about 200 cm.sup.2 and a lower section defining a lower chamber having a lateral cross-sectional area greater than, but smaller...     

Powder is coated with valve-metal by rotating it in a drum 15 so that it is presented to valve-metal vapor derived by evaporation of a source of valve-metal. In the case of coating with aluminum, the vapor may be produced by directing aluminum wire 10 on to a heater 11, and oxygen or air is admitted...     

An apparatus to mount wafers for sublimation plating on a rotary type wafer holding dome having more than one wafer mounting seat of window type on its circumference comprising a wafer cassette that holds many sheets of wafers piled up with spacing and holding pieces in-between and is driven up-and-down...     

A susceptor for use in a rotary disc reactor comprises a disc having a plurality of radial slots formed adjacent the periphery of the disc. The slots are circumferentially spaced from each other such that the oppositely-flowing heating currents in the sectors disposed between the slots are forced to...     

A method and apparatus for vacuum evaporating magnetic material onto a base. Cylindrical cans are disposed parallel to one another and rotated either in the same or opposite directions. A tape-shaped base is wound around the cans passing from an upper vacuum chamber to a lower vacuum chamber. A vacuum...     

A workpiece holder for semiconductor workpieces during treatment with a substantially cylindrical casing shaped like a hockey puck having an upper surface for receiving a workpiece, a lower surface, at least one bore between the surfaces for applying a vacuum and a hollow interior for a heat absorbing...     

Device for holding substrate wafers, especially semiconductor wafers, including a plurality of rings having disposed thereon at least one bearing surface, respectively, extending toward the interior of the respective ring, and means for yieldingly pressing the substrate wafers against the respective...     

A vapor-phase axial deposition system (5) for fabricating a lightguide soot boule (16). The system (5) is comprised of a short cylindrical housing (10) having end plates (26--26) affixed thereto. A starting member (58) is radially directed into the central portion of the housing (10) and a torch (12)...     

In apparatus for vapor phase growing N or P type semiconductor layers on semiconductor substrates supported by a rotary support disposed in a reaction furnace, and various types of gases are admitted into the furnace through a pipe line network and valves, there is provided a control device for ON-OFF...     

A susceptor for holding substrates during a high temperature vapor deposition process is constructed from separable top, bottom and side plates interlocked to each other in a gravity maintained assembly.

Apparatus for programmably orienting a semiconductor wafer in an ion implantation system so as to limit channeling or to control the depth of penetration of impinging ions. The apparatus is associated with a processing chamber door and includes a rotatable vacuum chuck for engaging the wafer and a motor...     

An apparatus for chemically vapor-depositing silicon material on surfaces of a plurality of substrates arranged in a stack that is continuously rotating. A gas distributor formed of a pair of coaxially tubes, in fixed relation with the rotating substrates, provides a pair of gas streams from a pair of...     

Target holder with mechanical scanning. The device comprises several target supports mounted on a plate, which rotates about an axis and means for displacing the supports relative to the plate, arranged in such a way that the radial displacement increment of a support between two consecutive passages...     

A treatment device utilizing plasma performs treatment by exposing a material to be treated to a plasma atmosphere formed by converting at least either one of fluorine and a fluorine compound into gas plasma, and said device comprises a structural member for forming the space for maintaining said plasma...     

A vacuum evaporation apparatus for depositing an evaporant as a thin film on a substrate comprises a sealed container including a substrate support for mounting thereon the substrate. A heat medium such as of diphenyl, for example, is filled in the substrate support. The heat medium in the substrate...     

A vacuum vapor deposition system including a high-vacuum vapor deposition chamber provided with a rotary cell around which band steel is wound as it is passed through the chamber. A crucible for molten metal has a hood for guiding vapor of said metal to a vapor deposition port opposed to the rotary cell,...     

Herein disclosed is a plasma treating apparatus for treating articles such as bumpers of synthetic resins with a plasma gas to activate the surfaces of said articles before the same are painted. The plasma treating apparatus comprises: a body defining a chamber for accommodating said articles; a plasma...     

A rotary drum comprises a hollow cylindrical outer member, a coaxial hub, and a plurality of spokes pivotally connected to the outer member and to the hub, all the spokes being aligned at the same oblique angle to the radius at the respective connections to the hub. Thermal expansion of the outer member...     

An improved reaction chamber for CVD is disclosed that combines the advantageous features of the known horizontal and vertical designs while minimizing their respective short comings. The improved reaction chamber essentially comprises a vertical, double-walled reaction tube having a tapered top provided...     

In a thin film deposition apparatus, means for depositing a film on a substrate and means for etching the deposited film to make flat the surface thereof, are provided in a reaction vessel independently of each other. This apparatus can rapidly deposit the film without rising the temperature of the substrate...     

A vacuum processing apparatus for applying a vacuum working process to a substrate to be processed by a plurality of processing steps comprises vacuum containers exclusively for use for processing disposed in place for each of the processing steps, and a vacuum container exclusively for use for conveyance...     

A chemical vapor deposition reactor for deposition on substrates, for example silicon epitaxial depositions. The apparatus includes a heating chamber in which a reactor is placed. Means of heating the substrates in the reactor is spaced from the reactor. The reaction chamber is positioned in the heating...     

In vacuum depositing apparatus, especially for the manufacture of magnetic tapes, a substrate holder is disposed in the form of a cooling cylinder, and in the path of the vapor stream there is a mask for the purpose of geometrically restricting the vapor stream. In order to prevent any condensation of...     

A frame which carries a plurality of circular substrates seated in grooves in planar alignment. The substrates are seated in grooves defined within the circumferential periphery of apertures within the frame. Each groove and aperture have a diameter slightly larger than the substrate, with the groove...     

The present invention relates to a plasma processing apparatus comprising a housing chamber which accommodates substances to be painted made of synthetic resin, a rotating support base which is provided in the housing chamber and rotates the substance to be painted, a plurality of hangers which are placed...     

An apparatus for forming a deposited film comprises a chamber, which can be brought into a reduced pressure, for forming a deposited film on a substrate by introducing a starting gas into said chamber and decomposing or polymerizing said gas, the apparatus is provided with both a means for decomposing...     

A chemical beam epitaxy system including a cylindrical vacuum chamber (32) with wafer heaters (42) affixed about the cylindrical wall, a rotatable wafer holder ring (40) with mounted wafer holders (38) adjacent the wafer heaters (42), and a central rotatble set of gas cells (44) for directing chemical...     

A plasma chemical vapor deposition apparatus comprises internal construction members comprising aluminum having surfaces exposed to a plasma atmosphere.

There is disclosed layer forming apparatus for forming a deposition layer on a substrate by means of electric discharge, comprising a supporting electrode, and a cassette of a structure capable of accommodating therein a substrate for layer formation and being inserted into said supporting electrode...     

A reactor for vapor phase epitaxy, wherein to bring about a vapor phase epitaxial growth or epitaxy on one face of a substrate, the latter is heated and placed in an epitaxy gas stream flowing in a given direction and the face is kept parallel to the direction and in a position where the gases play upon...     

Method and apparatus for the coating of a substrate wherein the following chronologically takes place under vacuum conditions: (i) non-oxidized plating material is deposited on the substrate via ion vapor deposition; and (ii) a coating material is chemically bonded with the non-oxidized plating material....     

The present invention is directed to apparatus for monitoring epitaxial crystalline growth mounted in a vacuum chamber, said apparatus including a support for mounting a single crystal substrate surface, a device for applying epitaxial material to the substrate surface, a device for impinging an electron...     

An on-line film fluorination apparatus cooperative with a continuous polymer film extruding apparatus is set forth. In the preferred and illustrated embodiment, a continuous feed film is introduced into a closed cabinet or housing having alignment and guide rollers for directing the film into the housing....     

An apparatus for positioning a plurality of semiconductor substrates on a movable, support in a desired pattern, in a semiconductor vapor phase growing apparatus. A memory is provided for storing two dimensional data corresponding to the desired pattern. The desired pattern is predetermined by the sizes...     

Substrates such as semiconductor wafers are treated with a gas by advancing the substrate along a path, preferably a circular path through the gas while maintaining a face of the substrate transverse, preferably oblique, to the path so that the gas contacts be exposed from the face of the substrate....     

A semiconductor processing system which includes: a first semiconductor wafer cassette for housing semiconductor wafers; a first transfer pod for enclosing the first cassette airtightly, the first pod having a box-like pod body with an open bottom and a bottom plate detachably attached to the pod body...     

A system for moving and processing workpieces includes individual stations isolated from one another and from a main chamber by seals formed by a transport mechanism. Workpieces are moved in a queue in a circular pattern, by a dial turret operated by a bell-crank and a Geneva mechanism. Stations seal...     

A chemical vapor deposition (CVD) reactor includes a vertically mounted multi-sided susceptor with means to adjust the gas flow across the width of each susceptor face. Gas can be fed thru the inside of the susceptor to various distribution devices positioned inside or above the susceptor. A pyrolytic...     

In a molecular beam epitaxy apparatus in accordance with the present invention, transfer means for transferring substrates, which have been transferred from an introduction chamber, to a growth chamber and for transferring the substrates after the growth of a film, which have been transferred from the...     

A device for releaseably holding a workpiece includes a resilient collet which is pivotally attached to a base. Several fingers for holding the workpiece extend from the collet. The fingers are pivoted by actuating a member which elastically deforms the collet and causes the fingers to pivot from a position...     

An apparatus for forming a deposited film by bringing gaseous starting materials for forming deposited film contact with a gaseous halogenic oxidizing agent which exerts oxidative effect on the starting materials, comprises, in a chamber for forming the deposited film, gas discharge means comprised of...     

Substrates such as semiconductor wafers are treated with a gas by advancing the substrate along a path, preferably a circular path through the gas while maintaining a face of the substrate transverse, preferably oblique, to the path so taht the gas contacts be exposed from the face of the substrate....     

A reactor, suitable for CVD processes, which presents a high aspect ratio to reactant gasses, is described. Substrates are mounted on oppositely disposed susceptors in a vertical chimney-type reactor. Means are provided to rotate the susceptors about an axis perpendicular to gas flow. Side-loading or...     

An improved reaction chamber for use in an epitaxial deposition process for processing a single wafer-at-a-time includes a cold-wall reactor having a substantially rectangular cross-section. The cross-sectional area of the reaction chamber is substantially reduced to increase the efficiency of the system....     

An apparatus for forming epitaxial layers, comprises a first susceptor disposed in a reaction furnace and having an outer periphery constituted by a heat reflection material and capable of supporting a plurality of semiconductor wafers, a second susceptor disposed coaxially with the first susceptor such...     

An vacuum evaporating apparatus for depositing thin films on a substrate comprises a vacuum tank, a hot-wall furnace for heating and evaporating a material to be evaporated, an auxiliary vacuuming means connected to the vacuum tank through a gate valve, a substrate exchanging mechanism for an evaporated...     

A reactor for chemical vapor deposition of epitaxial layers on crystalline substrates uses a medium frequency heating system, the power for the heating being provided by a multi-turn coil, inducing electrical currents in a susceptor of electrically conductive material, such as graphite, housed in a transparent...     

A film forming apparatus comprises a reaction furnace having a reaction chamber therein, injection nozzles for introducing a reactive fluid, provided on the reaction furnace, a discharge nozzle for discharging a reactive fluid, provided on the reaction furnace, and a pair of susceptors located in almost...     

An apparatus for Plasma CVD process comprises a vacuum chamber in which a plural number of substrates being placed along a circle and separately from each other, and means for passing a starting gas or an evacuating gas through gaps between the adjacent substrates.

An apparatus for a chemical vapor deposition in which at least one substrate which has partially an insulating film on the surface thereof is disposed in a pressure reduced reaction chamber, the reaction chamber is provided with a nozzle for feeding a reactive gas into the reaction chamber, and a light...     

A reactive ion etching apparatus includes first and second reactive chambers in a single buffer room. First and second stages are placed in front of corresponding reactive chambers. The centers of the reactive chambers and stages form a square. A first transfer arm transfers a wafer between the first...     

A vacuum apparatus comprising a substrate setting disc which is arranged in a conveyance chamber and on which substrates are placed, a drive system which drives and rotates the disc, a cam which is fixed to the disc, switching means to switch signal circuits through the cam, calculation means to receive...     

A vacuum-tight wafer carrier. The wafers are supported at each side by a slightly sloping shelf, so that minimal contact (line contact) is made between the wafer surface and the surface of the shelf. This reduces generation of particulates by abrasion of the surface of the wafer. The door of the vacuum...     

Disclosed is a parylene deposition chamber wherein reactive monomer vapors enter the chamber tangentially so as to create a rotational flow of vapor within the interior of the chamber. A substrate support fixture is positioned within the chamber and rotated in a direction counter to the rotational flow...     

Apparatus for continuously producing semiconductor films on substrates in a vacuum chamber. A plurality of reaction chambers are provided within the vacuum chamber, substrates are supported by a top plate and transferred to each reaction chamber, which are filled with a certain reactant gas mixture while...     

Substrates such as semiconductor wafers are treated with a gas by advancing the substrate along a path, preferably a circular path through the gas while maintaining a face of the substrate transverse, preferably oblique, to the path so that the gas contacts be exposed from the face of the substrate....     

In an apparatus for vapor-phase growth which comprises a reactor having an inlet for the introduction of the gas containing a source material on its top and a susceptor provided in the downstream portion of the reactor, the improvement wherein the susceptor is generally in a conical or polygonal pyramid...     

Metal deposition apparatus having at least one roller arranged for consolidation of the deposited metal by rolling thereof in the course of the deposition process, which roller comprises a plurality of sub-rollers of independent movement.

In a semiconductor vapor phase growing apparatus wherein a semiconductor wafer is heated in a reaction furnace, and an output of a source for heating, the temperature of the wafer, and flow quantities of gases supplied to the reaction furnace for vapor phase growing a semiconductor on the wafer by a...     

A metallizing apparatus vacuum deposits a metal onto a workpiece. Filaments having a metal thereon extend between a pair of electrode rods and are heated by conduction of electric current. The end portions of the filaments are secured to the respective rods by a securing apparatus which includes a support...     

A susceptor for use in a vertical vapor-phase growth system designed to heat substrates by means of heat transferred and radiated from a susceptor heated to cause vapor-phase growth on the substrates. The susceptor has a large number of spot-faced portions for receiving substrates, respectively. Each...     

A semiconductor manufacturing apparatus includes members for uniformly supplying a reactant gas into a chamber and uniformly discharging it from the chamber, and two rectifying members disposed on opposite sides of a substrate for making the flow rate and the direction of the reactant gas constant. This...     

A treatment apparatus used in manufacturing processes for semiconductor devices and the like, in which substrates are treated by means of a reaction gas. An inner tube, which is coaxially disposed in a reaction tube, defines a reaction region surrounding the substrates to be treated. The inner tube has...     

A rotatable substrate supporting mechanism for use in a chemical vapor deposition reaction chamber of the type used in producing semi-conductor devices is provided with a susceptor for supporting a single substrate, or wafer, for rotation about an axis normal to the center of the wafer. The mechanism...     

A vapor deposition apparatus for forming thin films on substrates with reactive gases, by rotating and revolving the substrates while heating the substrates in a reactor vessel, comprises a hollow susceptor carrier rotatably disposed inside the reactor vessel, susceptors rotatably disposed on the susceptor...     

A heat treatment apparatus used in the manufacturing of semiconductor devices and the like, for treating with a reaction gas substrates placed in a reaction tube of the apparatus. A support table is provided within the reaction tube, for supporting substrates during a treatment process, and is rotated...     

An epitaxial facility with at least one reaction chamber made of dielectric material, comprising a gas inlet in the ceiling area and a gas outlet in the floor area, a gas mixer connected to the gas inlet of the reaction chamber for the infeed of reaction and scavenging gases, a polyhedral support made...     

A device for releaseably holding a workpiece includes a resilient collet which is attached to a base by an elastomeric member. Typically, the collet is an annular ring. Several fingers for holding the workpiece extend from the collet. The fingers are pivoted by actuating a member which elastically deforms...     

Disclosed is a coating apparatus, comprising a gas exhaust rate controller disposed within an exhaust pipe connected to a cup which houses a substance to be treated, and a branch pipe connected to the exhaust pipe. The flow speed of the fluid within the branch pipe is measured, and the driving of the...     

A susceptor for use in a vertical vapor growth apparatus includes a susceptor body (12) having an upper surface, a plurality of wafer receiving portions (17) formed in the upper surface of the susceptor body (12), and plates (16) fixed in the upper surface of the susceptor body (12) near the wafer setting...     

An apparatus for dry etching, which comprises a stage for supporting a substrate, a rotor having a center shaft, the stage and an arm connecting the stage to the center shaft, and a driving means for turning the rotor at the center shaft as a turning center in the direction tangential to the circumference...     

Anisotropic etching can be obtained in the direction of the incident heated beam of reactive gas with the introduction of a second material for controlling reactivity.

A susceptor carrying semiconductor wafers for processing is suspended from a compliant attachment at its upper end and is lowered into a reaction chamber for processing. At the completion of processing, the susceptor is withdrawn vertically to permit a robot to unload the processed wafers and load unprocessed...     

A vacuum processing apparatus in which a DC bias to be produced on the surfaces of substrates which are to be processed in a vacuum chamber can be mechanically and easily controlled by adjusting the position of a susceptor in respect to an electrode body, and the susceptor and other components in the...     

The sputtering apparatus for the present invention is used for manufacturing optical discs. On loading and unloading of disc substrates to and from a vacuum chamber, a disc entrance and exit opening provided on the vacuum chamber is closed by a tray having an opening at the center thereof on which the...     

The present invention is a heat pipe susceptor for use in a vapor deposition system. The multi-layered refractory material susceptor provides a highly uniform heated surface upon which wafers are placed for heating by a radio frequency (RF) source. Because of the highly uniform surface temperature, susceptors...     

A vapor deposition apparatus for forming thin films on substrates with reactive gases, by rotating and revolving the substrates while heating the substrates in a reactor vessel, comprises a hollow susceptor carrier rotatably disposed inside the reactor vessel, susceptors rotatably disposed on the susceptor...     

A reactor for epitaxial growth wherein a susceptor on which semiconductor wafers are placed is heated by a heater, while rotating around a vertically provided gas feed pipe in a bell jar and a gas introduced through the gas feed pipe into the bell jar is decomposed to deposite a crystalline semiconductor...