Substrate heater

Disclosed is an improved optical thin film coating system comprising all essential elements of resistive and electron beam evaporation systems, chemical vapor deposition systems and reactive plasma deposition systems. Sequences of cleaning and deposition processes which previously required moving substrates...     

The apparatus comprises a plasma torch capable of an output speed of at least 100 m/s, a fine powder distributor, and a substrate holder which can be heated electrically and cooled by water, which is at an adjustable distance from the torch, and which is movable in two transverse directions at adjustable...     

Multi-layer coating apparatus and system for coating a substrate having a coating chamber and means for advancing the substrate in a horizontal position through the coating chamber. The coating chamber is provided with means for depositing the coating on the bottom side of the substrate as it is advanced...     

A coating consisting of or containing silicon is produced on glass by moving the glass, at a temperature of at least 400.degree. C, past a coating station to which silane-containing gas is supplied. The gas is released close to the glass surface into a hot zone opening towards the glass surface and at...     

An improved chemical vapor deposition reactor is characterized by a vapor deposition chamber configured to substantially eliminate non-uniformities in films deposited on substrates by control of gas flow and removing gas phase reaction materials from the chamber. Uniformity in the thickness of films...     

A coating system applies silicon dioxide to microelectronic dies mounted on electrical conductor systems such as lead frames, circuit boards and to connecting wires in a single operation while preventing the deposition of silicon dioxide on the outer portions of leads which are formed as part of its...     

Apparatus and process for vapor depositing epitaxial films on substrates. A gaseous reactant is introduced into a reaction chamber formed from a material, such as quartz, which is transparent and non-obstructive to radiant heat energy transmitted at a predetermined short wave length. A graphite susceptor,...     

Disclosed is a vapor deposition reactor comprising a series of individual gas cells respectively isolated from each other and containing a particular reactive or non-reactive gas required for one stage in a deposition process. Each cell is provided with an independent temperature control. A substrate...     

A gas reaction apparatus has an activation chamber, a heat exchanger and a reaction chamber. A gas is introduced into the activation chamber and activated there by electric discharge. The activated gas is then cooled by the heat exchanger in case a reaction to be effected in the reaction chamber is exothermic...     

An apparatus for chemically vapor-depositing a material onto surfaces of a plurality of substrates within a reaction chamber comprises means positioned within the chamber for supporting the substrates in a stack-like relationship wherein the surfaces are substantially parallel to each other and are separated...     

A method for decontaminating and subsequently metallizing a filament comprises: Passing the filament through the inner tube of a first chamber for decontamination which comprises two concentric tubes having an annular space therebetween, the inner tube of which has a series of fine holes therein; wherein...     

A low-temperature, high-pressure, medium-power process, which utilizes a radio frequency powered radial flow reactor, utilizes only silane and ammonia as the reactant gases for deposition. The methods disclosed result in the deposition on semiconductor wafers of moderately high density silicon-nitrogen...     

A method and apparatus for the nickel-plating of components, in which the finished component, which is to be nickel-plated, is heated to a temperature between 150.degree. and 200.degree. C. and is at the same time subjected to a continuously flowing gas stream containing nickeltetracarbonyl (Ni(CO).sub.4)...     

A diffusion apparatus, particularly useful for diffusing aluminum into semiconductor wafers, comprises a quartz evaporation tube in combination with a restrictor plate which is inserted in an open end thereof. The restrictor plate preferably has substantially the same shape as, but a slightly smaller...     

Apparatus and method for cryoinduced uniform deposition of cryogenic materials, such as deuterium-tritium (DT) mixtures, on the inner surface of hollow spherical members, such as inertially imploded targets. By vaporizing and quickly refreezing cryogenic materials contained within a hollow spherical...     

An apparatus for vacuum deposition of a thin film onto the surface of a substrate includes a vacuum container formed by a base plate, a cylindrical side wall and a top plate to accommodate at least four movable sealing caps each having a space adapted to confine a batch of substrates on a carrier of...     

A vapor phase deposition apparatus includes a coaxially mounted reactor tube, jacketed assembly tube, bearing/plug assembly, and rod/substrate holder. Gas inlets are provided in the reactor tube, and assembly tube and a vent is provided on the jacketed portion of the assembly tube, such that a double...     

An integral graphite susceptor of the barrel type comprising a hollow polyhedron arranged to support one or more semiconductor substrates on its outer planar wall surfaces. The substrates are supported in a novel column and row array in which each wafer is mounted on a wall surface portion that is related...     

A diffusion furnace (11) includes a typical process tube (12) and an outer envelope (26) which forms an annular chamber (37) with the process tube. A heating element (29) of high purity graphite substantially surrounds the process tube within the chamber (37). Inner surfaces of the chamber (37) are made...     

A wafer processing boat is provided with parallel slots that support each wafer at a slight angle with respect to vertical so that the wafers lean by gravity in a uniform manner and are thereby arranged in spaced parallel relationship. This enables the tolerances within the slots to be quite large with...     

This invention relates to a process control system and method of controlling a chemical vapor deposition (CVD) process where a coating is deposited on a substrate heated by passing a current through the substrate to create a heating zone. The control system relies on detecting a signal induced on the...     

A susceptor for use in a rotary disc reactor comprises a disc having a plurality of radial slots formed adjacent the periphery of the disc. The slots are circumferentially spaced from each other such that the oppositely-flowing heating currents in the sectors disposed between the slots are forced to...     

In a vacuum container an active (or atomic state) gas consisting of either one of active hydrogen, active oxygen and active nitrogen with a partial pressure of 1.times.10.sup.-3 Torr or less is produced. In an atmosphere of the active (or atomic state) gas, a film, which consists of a compound presenting...     

A furnace (100) is provided which aids in the reduction of polysilicon and quartz contaminants during polysilicon deposition on monocrystalline wafers. The wafers are heated for polysilicon deposition within the interior of a quartz tube (102) which is mounted so that the interior sidewalls are vertical...     

An epitaxial reactor comprises an enclosed evacuable container, a heating tube in the container in the wall of which there is a heat source and a temperature control system which is sealed at one end, a feed line for reaction gas, which line passes along the heating tube so as to provide an outlet for...     

In apparatus for vapor phase growing N or P type semiconductor layers on semiconductor substrates supported by a rotary support disposed in a reaction furnace, and various types of gases are admitted into the furnace through a pipe line network and valves, there is provided a control device for ON-OFF...     

A semiconductor device manufacturing unit in which plasma gas is maintained sealed in a quartz tube by a magnet disposed outside the quartz tube to make the density of plasma gas high and uniform thereby improving the quality of CVD films deposited with the gas and reducing the processing time for semiconductor...     

An apparatus for depositing metal or alloy films by a thermal decomposition process on a substrate includes a furnace having a number of selectively heated zones. The temperature of each zone is controllable so as to provide compensation for changes in the concentration of reactant materials in the different...     

An apparatus for chemically vapor-depositing silicon material on surfaces of a plurality of substrates arranged in a stack that is continuously rotating. A gas distributor formed of a pair of coaxially tubes, in fixed relation with the rotating substrates, provides a pair of gas streams from a pair of...     

A chemical vapor deposition apparatus has a reactor divided into a reaction space and a purging space by a susceptor for supporting a wafer and a loading chamber communicated through a gate with the reactor. Exhaust units are communicated with the reactor and loading chamber, respectively, so that the...     

In a radial flow plasma reactor, where reagent gas is introduced into the reaction chamber of the plasma reactor via a gas distribution ring located on the perimeter of a heated substrate holder while diluent gas is introduced into the chamber via the holes in an annular diluent gas member disposed over...     

A rotary sealing device for connecting a fixed gas supply pipe to a tube rotating about its axis. It comprises a first rotary member for receiving the fixed pipe, a second rotary member for receiving and sealing the rotary pipe and fixed to the first member, and a filter placed in a chamber made in the...     

A vacuum evaporation apparatus for depositing an evaporant as a thin film on a substrate comprises a sealed container including a substrate support for mounting thereon the substrate. A heat medium such as of diphenyl, for example, is filled in the substrate support. The heat medium in the substrate...     

An improved chemical vapor deposition device having heating means substantially surrounding an inner deposition chamber for providing isothermal or precisely controlled gradient temperature conditions therein. The internal components of the chamber are quartz or similar radiant energy transparent material....     

A chemical vapor deposition device having uniformly distributed heating means substantially surrounding an inner deposition reaction chamber for providing isothermal or precisely controlled gradient temperature conditions therein, the reaction chamber being surrounded by the walls of an outer vacuum...     

A vacuum vapor deposition system including a high-vacuum vapor deposition chamber provided with a rotary cell around which band steel is wound as it is passed through the chamber. A crucible for molten metal has a hood for guiding vapor of said metal to a vapor deposition port opposed to the rotary cell,...     

A semiconductor fabricating apparatus is capable of fabricating a high quality semiconductor with utilization of crystal growth, thermal oxidation of CVD membrane growth at low temperature. The semiconductor fabricating apparatus includes a reaction chamber having a gas inlet and a gas outlet, an insulative...     

A novel modular V-CVD diffusion furnace includes a cylindrical quartz diffusion tube having integral end flanges, a first metallic sealing plate having gas ports removably fastened to one flange, a second metallic sealing plate having a plurality of precisely aligned gas injection tube receiving apertures...     

A conventional vapor phase deposition reactor tube typically formed of quartz is provided with a tubular liner supporting one or two crucibles carrying in turn one or two boats for holding constituents used for the deposition process. The liner, crucibles and boats are formed preferably of pyrolytic...     

A vacuum processing apparatus and method utilize a vacuum chamber formed from a pair of casing sections, one of which is movable in to and out of sealing engagement with the other casing section. The movable casing section is equipped to carry a workpiece such that the workpiece is carried by the movable...     

A continuous, in-line deposition system is disclosed for coating large substrates. The apparatus includes loadlock chambers for loading and unloading substrates arranged in carriers. The carriers transport through the apparatus a plurality of pairs of substrates with their principal faces, that is faces...     

An improved reaction chamber for CVD is disclosed that combines the advantageous features of the known horizontal and vertical designs while minimizing their respective short comings. The improved reaction chamber essentially comprises a vertical, double-walled reaction tube having a tapered top provided...     

A method and an apparatus is provided for the manufacture of large-area silicon crystal bodies useful for solar cells. A carrier member consisting of a net-like graphite fabric or quartz fabric is moved horizontally through a heater arrangement carrying silicon plates on its surface which are matched...     

Chemical vapor deposition on a semiconductor wafer is obtained in a plasma reactor having a plurality of lamps for radiantly heating the wafer. Calibrated temperature sensing means remote from the wafer is used to control the heating of the wafer. Gases are supplied by way of a plurality of tubes extending...     

Chemical vapor deposition on a semiconductor wafer is obtained in a plasma reactor having a plurality of lamps for radiantly heating the wafer. Calibrated temperature sensing means remote from the wafer is used to control the heating of the wafer. Gases are supplied by way of a plurality of tubes extending...     

A chemical vapor deposition reactor for deposition on substrates, for example silicon epitaxial depositions. The apparatus includes a heating chamber in which a reactor is placed. Means of heating the substrates in the reactor is spaced from the reactor. The reaction chamber is positioned in the heating...     

Chemical vapor deposition on a semiconductor wafer is obtained in a plasma reactor having a plurality of lamps for radiantly heating the wafer. Calibrated temperature sensing means remote from the wafer is used to control the heating of the wafer. Gases are supplied by way of a plurality of tubes extending...     

A thin-film forming device has a support frame for supporting a substrate to be coated with a thin film, a reaction chamber having a space surrounded by the substrate supported on the support frame, side walls mounted under both sides of the substrate and a bottom wall mounted under the side walls, an...     

A layer of Cd.sub.x Hg.sub.1-x Te is grown on the surface of a substrate by decomposing alkyls of cadmium and telluride in a mercury atmosphere. The substrate is placed in a vessel containing a mercury bath with the vessel and bath at a suitable pressure and a temperature below the alkyl decomposition...     

A chemical vapor deposition epitaxial reactor (10) comprised of a quartz tube (12) with banks of IR lamp proximate the outside surface thereof. A splitter plate (30) located at the inlet of the tube (12) separates reactive gases and nonreactive gases directed longitudinally into the tube. The nonreactive...     

An apparatus is provided for selectively depositing metal films on metal and semiconductive surfaces of a substrate wherein the depositing surface of the substrate is isolated from undesired impinging radiation, such as infrared radiation.

In a molecular beam epitaxy apparatus, the loading chamber for introducing the substrates is made separable from both the preparation chamber for cleaning the substrates and the growth chamber for forming thin films onto the respective substrates, so that the evacuation of the loading chamber is possible...     

Apparatus for evaporating numerous layers of various substances upon a substrate includes square witness chips transparent to a specific beam of radiation. A witness chip holder, having a cylindrical base, has an axial hole vertically disposed from its central axis. The axial hole has a cross-sectional...     

A surface treatment apparatus is composed of a supporting die for holding a substrate thereon to heat or cool the substrate; a cover capable of advancing close to the supporting die or into point-to-point contact with the supporting die to define a treatment space over the entire upper surface of the...     

A vertical furnace for heat-treating a semiconductor is capable of effectively and safely accomplishing the heat-treating of a semiconductor. The vertical furnace includes a furnace section which is opened at the lower end thereof to allow a boat for supporting a semiconductor thereon to be introduced...     

An apparatus for the chemical vapor deposition on substrates of coatings comprising compounds of a titanium sub-group of metals, the vanadium sub-group of metals and the chromium sub-group of metals at temperatures in the range of 250.degree. to 850.degree. C. is disclosed. Sub-halides, such as TiCl.sub.3,...     

A chemical beam epitaxy system including a cylindrical vacuum chamber (32) with wafer heaters (42) affixed about the cylindrical wall, a rotatable wafer holder ring (40) with mounted wafer holders (38) adjacent the wafer heaters (42), and a central rotatble set of gas cells (44) for directing chemical...     

A plasma chemical vapor deposition apparatus comprises internal construction members comprising aluminum having surfaces exposed to a plasma atmosphere.

A chemical vapor deposition apparatus includes a gas mixing chamber and a water-cooled reaction chamber with adjustable water-cooled baffle between them. A wafer is clamped face down to a chuck and an inert gas such as helium is forced between the chuck and the wafer to insure proper heat conduction...     

There is a substantial heat loss and drop in temperature in a hot-wall diffusion tube when a batch of wafers at room temperature is loaded into the tube. The temperature of the atmosphere in a zone in the tube is quickly recovered by sensing both the temperature of the tube atmosphere and the temperature...     

A reactor for vapor phase epitaxy, wherein to bring about a vapor phase epitaxial growth or epitaxy on one face of a substrate, the latter is heated and placed in an epitaxy gas stream flowing in a given direction and the face is kept parallel to the direction and in a position where the gases play upon...     

An apparatus for photochemically processing a silicon wafer placed in a reactive gas by an illuminating energy for etching or film forming purposes. The apparatus includes a reaction chamber in which the silicon wafer is positioned and the reaction chamber is filled with a gas which is photochemically...     

Vacuum pumping system comprises a plurality of vacuum processing vessels, semiconductor processing reactors, and the like, connected to a common manifold evacuated by a generously large central vacuum unit. The manifold is maintained at a substantially constant designated pre-set pressure higher than...     

One fast cool-down furnace embodiment discloses a double wall in the interspace of which a cooling air stream is flowable to provide fast cool-down of a load of wafers. The double wall embodiment is retrofittable on existing diffusion furnace, and includes a cylindrical member aligned in concentric relation...     

A semiconductor wafer heating chamber has an optical element between a light source and a wafer for redistributing the light from the light source. The optical element is constructed in such a manner as to produce the desired illumination (and thus heating) pattern on the semiconductor wafer from the...     

A process of high pressure close-space epitaxy in the semi-confined atmosre of a reusable demountable ampule in a furnace growth chamber. The ampule has a substrate and source materials placed therein whereupon the ampule is then loaded in the pressure furnace and the furnace is sealed air tight. Alternate...     

Chemical vapor deposition apparatus has a quartz envelope supporting a resistance heater. A boron nitride pill box configured core supports resistance heater windings. The core has a base having a cylindrical upper portion defining a hollow chamber and an upper annular ring. A circular top includes an...     

In a chemical vapor deposition apparatus for coating semiconductor wafers, the wafer is held face down in the reaction chamber. A radiant heat source above the wafer and outside the reaction chamber. The wafer is held on a ring chuck by means of a retractable clamp heats the wafer from its backside to...     

A chemical vapor deposition (CVD) reactor includes a vertically mounted multi-sided susceptor with means to adjust the gas flow across the width of each susceptor face. Gas can be fed thru the inside of the susceptor to various distribution devices positioned inside or above the susceptor. A pyrolytic...     

A thin-film depositing apparatus which includes a reaction container adapted to receive a material gas therein, for a thin-film depositing reaction, a substrate supporting member located in a predetermined position in the reaction container in order to set a substrate on which a thin film is to be deposited,...     

A process for forming a film, characterized in that, in forming a film by glow discharge decomposition, one or more electrode pair rows each consisting of a plurality of high frequency electrode pairs are arranged in a line and in parallel and substrates are arranged on both sides of said electrode pair...     

A substrate processing apparatus includes input and output chambers for loading and unloading substrates into and out of the apparatus, a separation chamber connected to the input and output chambers, a plurality of substrate processing chambers connected to the separation chamber for processing the...     

A process module having a heating module with two heating rings and a reflector. The heating rings are separately controlled in order to provide a variety of heating configurations to a wafer. A transparent wall or a conductive substrate is provided between the heating rings and a workpiece which is...     

A reactor, suitable for CVD processes, which presents a high aspect ratio to reactant gasses, is described. Substrates are mounted on oppositely disposed susceptors in a vertical chimney-type reactor. Means are provided to rotate the susceptors about an axis perpendicular to gas flow. Side-loading or...     

An improved reaction chamber for use in an epitaxial deposition process for processing a single wafer-at-a-time includes a cold-wall reactor having a substantially rectangular cross-section. The cross-sectional area of the reaction chamber is substantially reduced to increase the efficiency of the system....     

An apparatus for forming epitaxial layers, comprises a first susceptor disposed in a reaction furnace and having an outer periphery constituted by a heat reflection material and capable of supporting a plurality of semiconductor wafers, a second susceptor disposed coaxially with the first susceptor such...     

An vacuum evaporating apparatus for depositing thin films on a substrate comprises a vacuum tank, a hot-wall furnace for heating and evaporating a material to be evaporated, an auxiliary vacuuming means connected to the vacuum tank through a gate valve, a substrate exchanging mechanism for an evaporated...     

A longitudinally extending cross-flow liner within a longitudinally extending cylindrical reaction vessel cooperates with at least one longitudinally extending gas injector within the cross-flow liner to provide transversely flowing gas across the surfaces of vertically oriented semiconductor wafers...     

A reactor for chemical vapor deposition of epitaxial layers on crystalline substrates uses a medium frequency heating system, the power for the heating being provided by a multi-turn coil, inducing electrical currents in a susceptor of electrically conductive material, such as graphite, housed in a transparent...     

A film forming apparatus comprises a reaction furnace having a reaction chamber therein, injection nozzles for introducing a reactive fluid, provided on the reaction furnace, a discharge nozzle for discharging a reactive fluid, provided on the reaction furnace, and a pair of susceptors located in almost...     

Preferred embodiments include a chemical beam epitaxy system (30) with cells for Group III compounds (44) and Group V compounds (40) for epitaxial growth of III-V semiconductor materials on a substrate (38) together with an atomic hydrogen cell (42) for scavenging carbonaceous residues during the chemical...     

A new gas distributor 31 provides an extremely uniform gas across a wide cross section distance. An OMVPE reactor equipped with this distributor, a unique low volume quartz insert, a load-locked growth chamber and a low pressure operation scheme provide a reactor system capable of growing extremely uniform...     

An apparatus for Plasma CVD process comprises a vacuum chamber in which a plural number of substrates being placed along a circle and separately from each other, and means for passing a starting gas or an evacuating gas through gaps between the adjacent substrates.

A process module which is compatible with a system using primarily vacuum wafer transport, but which permits processing multiple slices in parallel in a single module. This is accomplished by using notched quartz arms in the module, so that the transfer arm can place each of several wafers into one set...     

A tubular radiant furnace having multiple radiation shields is capable of producing very high working temperatures in an extremely clean environment. A cool-walled quartz muffle tube surrounded by high temperature electrical heaters in a high temperature cavity defines the work chamber. Concentric radiation...     

A semiconductor producing apparatus for use in photochemical vapor deposition for forming various types of film on a substrate at a low temperature as a first reaction gas excited and decomposed by a laser beam and a second reaction gas converted into a plasma state by a plasma generator react with each...     

An apparatus for producing semiconductor devices has a hollow reaction tube which receives a boat carrying a row of a multiplicity of semiconductor wafers held in vertical posture. A flow stabilizing member is disposed in the vicinity of the wafer which is on the downstream end of the wafer row as viewed...     

An apparatus for a chemical vapor deposition in which at least one substrate which has partially an insulating film on the surface thereof is disposed in a pressure reduced reaction chamber, the reaction chamber is provided with a nozzle for feeding a reactive gas into the reaction chamber, and a light...     

An exhaust processing apparatus comprises a cracking furnace for cracking and solidifying exhaust discharged from a reactor for forming crystals on a semiconductor substrate, a first collecting device for collecting relatively large components solidified in the cracking furnace, a second collecting device...     

A molecular beam epitaxy apparatus comprises a growth chamber provided therein with a holder support frame and connected via a first gate valve to a preparation chamber which in turn is connected to a loading chamber via a second gate valve. A first transfer tray arranged in the loading chamber receives...     

A processing apparatus and method wherein two separate gas feeds are provided in proximity to the face of a face down wafer. A shroud can be used to maximize mixing of the two gas feed streams without excessive residence time.

Apparatus for continuously producing semiconductor films on substrates in a vacuum chamber. A plurality of reaction chambers are provided within the vacuum chamber, substrates are supported by a top plate and transferred to each reaction chamber, which are filled with a certain reactant gas mixture while...     

A reaction system and process for uniformly heating semiconductor substrates and a device for supporting the same and direct conductive heating of IC wafers within a reactor are described. The substrate is held in direct contact with the heating source positioned within the reactor. The heat source is...     

A processing apparatus includes a processing chamber and an insertion jig for inserting an object to be processed into the processing chamber. The processing chamber and the insertion jig are adapted to be individually movable relative to a heating section, so that the operation of loading and unloading...     

A thin film-forming apparatus includes a vessel defining a reaction chamber, a stage for holding an object for processing within the reaction chamber, and members for introducing reaction gases into the reaction chamber. The apparatus further has an electrode disposed at the periphery of the object held...     

The interior of a chamber within which a target assembly is disposed is evacuated to remove residual impurity gases while heated water flows within the target assembly. When the internal pressure within the chamber drops belows a predetermined level, cooled water flows within the target assembly, and...     

Substrates such as semiconductor wafers are treated with a gas by advancing the substrate along a path, preferably a circular path through the gas while maintaining a face of the substrate transverse, preferably oblique, to the path so that the gas contacts be exposed from the face of the substrate....     

A substrate is heated in a crystal growth vessel evacuated to a ultrahigh vacuum, and gases containing component elements of a crystal to be grown on the substrate are introduced into the vessel under predetermined conditions to cause successive epitaxial growth of single molecular layers, the number...     

In an apparatus for vapor-phase growth which comprises a reactor having an inlet for the introduction of the gas containing a source material on its top and a susceptor provided in the downstream portion of the reactor, the improvement wherein the susceptor is generally in a conical or polygonal pyramid...     

The present invention relates to an apparatus for producing semiconductors utilizing vacuum chemical epitaxy (VCE) method. Said VCE method has a high utilization efficiency of reactant gas and can finish the surface of a semiconductor layer formed on the surface of a substrate smoothly in comparision...