Work support

A support structure composed of Si or SiC for supporting semiconductor crystal discs during annealing or doping thereof. A somewhat tube-shaped member having at least one flat side is formed by thermal deposition of a gaseous silicon compound onto a similarly shaped carrier member and the tube-shaped...     

An integral graphite susceptor of the type comprising a hollow polyhedron, adapted to support a semiconductor substrate on an outer planar surface of a wall thereof, has a recessed cavity adjacent the inner surface of the wall and shaped so that the floor of the cavity is parallel to the outer planar...     

A cross-flow reactor for single pass reaction of a plurality of semiconductor wafers with process gas at spaced locations within a heated reactor chamber. The process gas flows along a heated length of the chamber, counterflows to at least three spaced locations within the chamber, traverses the longitudinal...     

A microscope slide smoker device for providing a layer of smoke reactant to laboratory microscope slide comprising a base section having a flat upper surface with a rectangular aperture therein, fixture means mounted on said base at the shorter ends of said aperture for holding, aligning and smoking...     

A vacuum metallizing apparatus for coating hollow articles such as tap bodies includes a carrier defining a shallow cylindrical chamber which is arranged for connection to a high vacuum source through valves. The carrier provides a plurality of ports with seatings in each of which a hollow article may...     

A machine for vapor coating a workpiece with a coating metal supplied in wire form includes a vessel enclosing a vacuum chamber and having a door for providing access to the vacuum chamber. The vessel is connected with a vacuum pump for evacuating the vacuum chamber. Mounted within the vacuum chamber...     

A crystal plating device and method thereof in which a crystal to be plated and thereby set at a desired frequency is placed in an external removable holder or slug for insertion into a chamber of a plating device. The device is connected to a vacuum pump which is activated after the slug is loaded....     

Apparatus for thermal oxidation of silicon wafers at high pressures of a type wherein a reactor of a refractory material is disposed within a pressure vessel, and wherein a margin of a wafer portal of the reactor and a closure of the refractory material have congruent surfaces enabling a hermetic seal...     

A chemical vapor reaction system including a closed reaction vessel. The vessel forms a reaction chamber which has an axis of length and a cross-section normal to the axis. An end closure is removable to provide access to the reaction chamber. Reactant material is supplied to the reaction vessel through...     

A plasma reactor includes a series of parallel disposed electrodes carried in a vacuum vessel chamber. The series of electrodes is adapted to have alternate polarities. Supporting brackets are provided for positioning workpieces, such as multilayer printed circuit boards, parallel to and between electrodes...     

A crystal plating device and method thereof in which a crystal to be plated and thereby set at a desired frequency is placed in an external removable holder or slug for insertion into a chamber of a plating device. The device is connected to a vacuum pump which is activated after the slug is loaded....     

A method for forming a coating of a desired pattern on the surface of a substrate which comprises covering the substrate surface with a sheet-like mask having openings corresponding to the desired pattern and directing a film-forming substance from a source toward the substrate surface through the mask,...     

A vapor growth method of forming deposition film on a plurality of substrates disposed within a cylindrical reaction vessel by causing flow of reaction gas under a reduced pressure through the reaction vessel, in which the treated surfaces of substrates are inclined to the upstream side of the reaction...     

An improvement in the method of forming polymerization resists by directing high energy particles such as electron beams along a path across a vacuum chamber and onto polymerizable molecular species at a substrate surface with sufficient energy to polymerize the polymerizable molecular species in situ...     

An ion shower apparatus comprising a plasma formation chamber in which plasma is produced so as to produce ions, a single ion extraction grid disposed in one portion of the plasma formation chamber and for extracting the ions from the plasma formation chamber so as to form an ion beam in the form of...     

At least three spring-mounted members disposed around the periphery of an aperture in a wafer-mounting plate are arranged to engage and securely hold edge portions of a semiconductor wafer to be processed. When the spring-mounted members are actuated toward the front side of the plate, a wafer can be...     

A chemical vapor deposition apparatus has a reactor divided into a reaction space and a purging space by a susceptor for supporting a wafer and a loading chamber communicated through a gate with the reactor. Exhaust units are communicated with the reactor and loading chamber, respectively, so that the...     

In a radial flow plasma reactor, where reagent gas is introduced into the reaction chamber of the plasma reactor via a gas distribution ring located on the perimeter of a heated substrate holder while diluent gas is introduced into the chamber via the holes in an annular diluent gas member disposed over...     

A quartz boat is formed with a plurality of spaced, parallel rods having slots for supporting a series of semi-conductor wafers in a generally edgewise, spaced, parallel position. The slots continue to the ends of the rods, and the cross members supporting the rods are spaced inwardly from the rod ends,...     

An improved crystal plating device having a base containing a power circuit and an oscillating circuit. The base is provided with a chamber and has a sealed top enclosing the chamber. At least one pair of filament posts are fixed to the base and disposed within the chamber and in the power circuit. A...     

A gas is introduced into a surface treatment chamber and is activated therein. The surface of a specimen placed in the surface treatment chamber is treated by using reactive species generated by this activation. A means of supplying controllable energy such as the energy of heat, light, or electron beams...     

This ion beam system provides an ion beam pattern which is produced without the need for a mask. A programmable grid is used in combination with an ion beam source, where the apertures of the programmable grid can have electrical potentials associated therewith which either extract ions or impede the...     

An improved chemical vapor deposition device having heating means substantially surrounding an inner deposition chamber for providing isothermal or precisely controlled gradient temperature conditions therein. The internal components of the chamber are quartz or similar radiant energy transparent material....     

A chemical vapor deposition device having uniformly distributed heating means substantially surrounding an inner deposition reaction chamber for providing isothermal or precisely controlled gradient temperature conditions therein, the reaction chamber being surrounded by the walls of an outer vacuum...     

A chemical vapor deposition wafer boat for polysilicon deposition in a vertical CVD apparatus comprises upper and lower, mutually engaging, open ended hemicylinders. Gas flow passageways are present in a diffusion zone of the lower hemicylinder wall, but not in the remainder of the walls of the hemicylinder....     

A method for annealing semiconductor samples, especially following ion-implantation of semiconductor samples is disclosed. A furnace on a set of rails is passed over the semiconductor sample which is supported on a stationary wire basket made of low thermal mass, fine tungsten wire. The furnace temperature...     

A substrate having two parallel planar faces and an edge with a groove is simultaneously coated on both sides in a vacuum chamber. The substrate is raised, lowered and held on edge while the parallel faces are vertically disposed by a blade inserted into the groove so that while the substrate is coated...     

A side lifting wafer boat assembly is provided comprising a wafer supporting boat and boat lifting tool. The boat lifting tool is detachably engageable along the length of a boat. The tool is designed to permit sideway engagement with boats specifically designed for side lifting, or with boats that may...     

A novel modular V-CVD diffusion furnace includes a cylindrical quartz diffusion tube having integral end flanges, a first metallic sealing plate having gas ports removably fastened to one flange, a second metallic sealing plate having a plurality of precisely aligned gas injection tube receiving apertures...     

An improved crystal plating device having a base containing a power circuit and an oscillating circuit. The base is provided with a chamber and has a sealed top enclosing the chamber. At least one pair of filament posts are fixed to the base and disposed within the chamber and in the power circuit. A...     

In a method and apparatus for continuous plasma CVD deposition in and through a vacuum system, box carriers are provided to carry both the substrates and the plasma exciting electrodes through the system. Contamination of the system and cross doping of the applied coatings are reduced.

Evacuable equipment wherein for effective thermal transfer use is made of a thermally conductive fluid confined by a flexible diaphragm for heat transfer across the diaphragm between the fluid and a component forming part of or being treated in the equipment and situated under vacuum in thermal contact...     

A substrate support electrode for use in plasma processing equipment has a book-shaped prismatic body containing a magnet core with flange-like pole pieces at each end to provide a longitudinal magnetic field wrapped around the electrode body. An auxiliary field-shaping magnet spaced from a substrate...     

A chemical vapor deposition wafer boat for supporting a plurality of wafers in an evenly spaced, upright orientation perpendicular to the axis of the boat comprises a cylinder having closed ends and comprised of mutually engaging upper and lower hemicylinders. The upper hemicylinder has diffusion zones...     

A device for holding one or more substrates, each of substantially circular profile, especially in vacuum coating apparatus. In a vertical plate there is provided an opening on whose edge holding means are provided into which each substrate is fitted. In accordance with the invention, the opening has...     

A conventional vapor phase deposition reactor tube typically formed of quartz is provided with a tubular liner supporting one or two crucibles carrying in turn one or two boats for holding constituents used for the deposition process. The liner, crucibles and boats are formed preferably of pyrolytic...     

A molecular beam epitaxy system wherein the wafer on which epitaxial deposition is to occur is not soldered to a substrate holder. Instead, a substrate holder with a lip approximately as high as the thickness of the wafer is used, and a retaining ring attaches to the substrate holder to hold the wafer...     

A continuous, in-line deposition system is disclosed for coating large substrates. The apparatus includes loadlock chambers for loading and unloading substrates arranged in carriers. The carriers transport through the apparatus a plurality of pairs of substrates with their principal faces, that is faces...     

Formation of a plasma etch mask on a film on a substrate by photodecomposition of a gas at selective portions of the film's surface to deposit etch mask material and form the etch mask is disclosed. The photodecomposition by blanket illumination through a photomask and by direct write with a computer...     

A magnetron plasma reactor wherein the susceptor is an aluminum arm extending into approximately the middle of a solenoidal magnetic field generated by a dc current.

A process for the modification of substrate surfaces is described, wherein etching or deposition at a surface occurs only in the presence of both reactive species and a directed beam of coherent light.

A multi-wafer load lock apparatus for use in wafer processing machines provides access to wafers in an internal cassette by orthogonal wafer transport devices. Upper and lower bell jars, which seal to a sealing plate, provide access to the cassette by outside and vacuum transport mechanisms, respectively....     

Apparatus for programmably orienting a semiconductor wafer in an ion implantation system so as to limit channeling and to control the depth of penetration of impinging ions. The apparatus is associated with a processing chamber door and includes a rotatable vacuum chuck for engaging the wafer and a motor...     

A process and apparatus for depositing a high-quality metallic coating on a steel strip. In this process, one or several metals or metal alloys are continuously evaporated in a thermal plasma from nonoxidizing gas and transformed into the highly ionized state of the thermal plasma. Subsequently, the...     

A chemical vapor deposition reactor for deposition on substrates, for example silicon epitaxial depositions. The apparatus includes a heating chamber in which a reactor is placed. Means of heating the substrates in the reactor is spaced from the reactor. The reaction chamber is positioned in the heating...     

A chemical vapor deposition wafer boat for supporting a plurality of wafers in an evenly spaced, upright orientation perpendicular to the axis of the boat comprises a cylinder having closed ends and comprised of mutually engaging upper and lower hemicylinders. The upper hemicylinder has diffusion zones...     

In vacuum depositing apparatus, especially for the manufacture of magnetic tapes, a substrate holder is disposed in the form of a cooling cylinder, and in the path of the vapor stream there is a mask for the purpose of geometrically restricting the vapor stream. In order to prevent any condensation of...     

A thin-film forming device has a support frame for supporting a substrate to be coated with a thin film, a reaction chamber having a space surrounded by the substrate supported on the support frame, side walls mounted under both sides of the substrate and a bottom wall mounted under the side walls, an...     

A chemical vapor deposition epitaxial reactor (10) comprised of a quartz tube (12) with banks of IR lamp proximate the outside surface thereof. A splitter plate (30) located at the inlet of the tube (12) separates reactive gases and nonreactive gases directed longitudinally into the tube. The nonreactive...     

A method and apparatus for depositing a film on a wafer type substrate by vapor deposition. A planar, plate-like susceptor is positioned in a reaction chamber at an angle which is inclined with respect to the horizontal. The wafer is heated to a deposition temperature by means of a radio frequency induction...     

The use, for heat transfer in evacuable or other equipment, of a thermally conductive fluid, confined by a flexible diaphragm, for heat transfer across the diaphragm between the fluid and a component placed in thermal contact with the diaphragm.

In a vacuum vapor-deposition system a substrate holder is arranged stationary in the main part of a vapor-deposition chamber. Evaporation apparatuses are arranged on the floor of the vapor-deposition chamber, which is moveably connected to the main part of the vacuum-deposition chamber via a bellows...     

A surface treatment apparatus is composed of a supporting die for holding a substrate thereon to heat or cool the substrate; a cover capable of advancing close to the supporting die or into point-to-point contact with the supporting die to define a treatment space over the entire upper surface of the...     

An apparatus for producing semiconductor devices in which a plurality of treatment chambers such as a load chamber, an etching chamber, a sputtering chamber, an ion implantation chamber, a CVD chamber, an unload chamber, a transfer chamber, a heat-treatment chamber, a rinsing chamber and the like, are...     

A chemical vapor deposition wafer boat for supporting a plurality of wafers in an evenly spaced, upright orientation perpendicular to the axis of the boat comprises a cylinder having closed ends and comprised of mutually engaging upper and lower hemicylinders. The upper hemicylinder has diffusion zones...     

An apparatus for the chemical vapor deposition on substrates of coatings comprising compounds of a titanium sub-group of metals, the vanadium sub-group of metals and the chromium sub-group of metals at temperatures in the range of 250.degree. to 850.degree. C. is disclosed. Sub-halides, such as TiCl.sub.3,...     

A chemical vapor deposition apparatus includes a gas mixing chamber and a water-cooled reaction chamber with adjustable water-cooled baffle between them. A wafer is clamped face down to a chuck and an inert gas such as helium is forced between the chuck and the wafer to insure proper heat conduction...     

A plasma CVD apparatus including a reaction chamber; a pair of electrodes disposed in the reaction chamber between which plasma discharge occurs; a substrate support maintained at a reference voltage; a vacuum pump for evacuating the reaction chamber; a first voltage supply for supplying a first alternating...     

A vapor masking device useable during the execution of a metal vapor depositing technique in a vacuum for masking inner and outer peripheral regions of a disc. The device comprises a support plate having a mounting opening and an annular seat protruding a slight distance radially inwardly into the mounting...     

An apparatus for surface treatment, especially for etching and/or coating workpieces by ion bombardment is described. This apparatus comprises at least one ionization chamber having at least one hot cathode, gas atoms being introduced into this chamber for the low-voltage arc-discharge between the ionization...     

Microwaves supplied from a magnetron through a waveguide are resonated in a cavity resonator to increase their amplitude. The resonated microwaves are emitted into a plasma production chamber through slits and a wall. Then plasma is produced in the plasma production chamber into which plasma processing...     

Chemical vapor deposition apparatus has a quartz envelope supporting a resistance heater. A boron nitride pill box configured core supports resistance heater windings. The core has a base having a cylindrical upper portion defining a hollow chamber and an upper annular ring. A circular top includes an...     

In a chemical vapor deposition apparatus for coating semiconductor wafers, the wafer is held face down in the reaction chamber. A radiant heat source above the wafer and outside the reaction chamber. The wafer is held on a ring chuck by means of a retractable clamp heats the wafer from its backside to...     

A chemical vapor deposition (CVD) reactor includes a vertically mounted multi-sided susceptor with means to adjust the gas flow across the width of each susceptor face. Gas can be fed thru the inside of the susceptor to various distribution devices positioned inside or above the susceptor. A pyrolytic...     

A high pressure processing apparatus and method which is compatible with a system wherein wafers are largely transported and processed under vacuum. The pressure vessel can be extremely small, i.e. has a total pressurized volume of which almost all interior points are within one or two centimeters of...     

There is disclosed a method and apparatus for easily mounting, holding and facilitating the coating of preselected areas of very thin semiconductor samples. The apparatus includes a base adapted for placement in a coating chamber. The base includes a pair of spaced apart supporting arms onto which a...     

A longitudinally extending cross-flow liner within a longitudinally extending cylindrical reaction vessel cooperates with at least one longitudinally extending gas injector within the cross-flow liner to provide transversely flowing gas across the surfaces of vertically oriented semiconductor wafers...     

A silicone film is formed by drying a solution coated on a substrate at a temperature below 150.degree. C. to form a silicone film on the substrate, treating the silicone film in an oxygen plasma, and heating the silicone film treated in the plasma at a temperature of 150.degree. C. or higher.

A plasma apparatus which is; provided with a pair of plasma generation chambers at both sides of a specimen chamber provided therein with two specimen mounts for fixing specimens to be subjected to the predetermined processing such as plasma CVD; designed to use the specimen chamber in common so as to...     

A process module which is compatible with a system using primarily vacuum wafer transport, but which permits processing multiple slices in parallel in a single module. This is accomplished by using notched quartz arms in the module, so that the transfer arm can place each of several wafers into one set...     

A reusable evaporation fixture for aligning a plurality of small individual substrates to a single contact mask is described. The fixture preferably includes a series of thin inner plates held together by a base plate and top plate. One of the inner plates includes a plurality of spring means corresponding...     

An apparatus for producing semiconductor devices has a hollow reaction tube which receives a boat carrying a row of a multiplicity of semiconductor wafers held in vertical posture. A flow stabilizing member is disposed in the vicinity of the wafer which is on the downstream end of the wafer row as viewed...     

A seal ring presses against a wafer on a CVD chuck continuously around the outer periphery of the wafer, and with sufficient force to hold the backside of the wafer against the chuck, so no CVD material may deposit on the backside of the wafer. The seal ring has one surface for contacting the frontside...     

A vapor phase reaction apparatus includes a reaction chamber defined by first and second walls fixed opposite each other. Third and fourth walls are introduced into the reaction chamber already having affixed to them a substrate for deposition. A reactive gas is introduced into the reaction chamber for...     

Disclosed is a parylene deposition chamber wherein reactive monomer vapors enter the chamber tangentially so as to create a rotational flow of vapor within the interior of the chamber. A substrate support fixture is positioned within the chamber and rotated in a direction counter to the rotational flow...     

Apparatus for continuously producing semiconductor films on substrates in a vacuum chamber. A plurality of reaction chambers are provided within the vacuum chamber, substrates are supported by a top plate and transferred to each reaction chamber, which are filled with a certain reactant gas mixture while...     

A processing apparatus includes a processing chamber and an insertion jig for inserting an object to be processed into the processing chamber. The processing chamber and the insertion jig are adapted to be individually movable relative to a heating section, so that the operation of loading and unloading...     

In an apparatus for vapor-phase growth which comprises a reactor having an inlet for the introduction of the gas containing a source material on its top and a susceptor provided in the downstream portion of the reactor, the improvement wherein the susceptor is generally in a conical or polygonal pyramid...     

A plasma processing device intended to plasma-process a wafer which is mounted on a mount in the plasma process vessel and clamped at the peripheral rim thereof between a clamping member and the mount. The wafer thus processed can be then handled when it is released from its clamped state. A plate spring...     

Wafer supporting method and apparatus having at least two wafer supporting slots for each edge-wise oriented wafer in a plurality of coaxial edge-wise aligned wafers. The two wafer locations are essentially at the bottom and at an upper "side" i.e., slightly below the widest diameter dimension of and...     

An apparatus for forming thin film includes a vacuum container to which an active gas, an inert gas, or a mixture thereof is introduced, a source of evaporation for evaporating a substance being evaporated in the vacuum container, a counter electrode disposed in the vacuum container and holding a substrate...     

A plasma processing apparatus including a microwave generator, a waveguide for supplying microwaves generated by the microwave generator, a cavity resonator for resonating the microwaves supplied by the waveguide, and a plasma processing chamber. The plasma processing chamber is coupled to the cavity...     

A susceptor for use in a vertical vapor-phase growth system designed to heat substrates by means of heat transferred and radiated from a susceptor heated to cause vapor-phase growth on the substrates. The susceptor has a large number of spot-faced portions for receiving substrates, respectively. Each...     

A reactor for MOCVD systems, having a reaction vessel through which the reacting gas or gases flow and in which the substrates are arranged in such a manner that a main surface is approximately parallel to the flow direction. The reaction vessel is made of quartz-glass and has, at least in the region...     

Apparatus of quartz or silicon carbide for use in horizontal or vertical furnace tubes, applicable to both diffusion/oxidation processes and to low pressure chemical vapor deposition process. The primary objectives include the adjustment of process gas flow distribution to improve film growth and composition...     

A side lifting boat and a tool assembly is disclosed. The tool is detachably engageable to selectively lift a boat. Both boat and tool are anti-rotationally engageable by the tool's upper and lower projections at its forward end fitting into a correspondingly shaped space defined between the outer (non-wafer-carrying)...     

A CVD apparatus in which a reaction chamber includes a pair of electrodes which define a plasma generating space therebetween. A metallic enclosure surrounds the plasma generating space thereby preventing plasma which has been produced within the space from escaping. The enclosure can be utilized to...     

An epitaxial facility with at least one reaction chamber made of dielectric material, comprising a gas inlet in the ceiling area and a gas outlet in the floor area, a gas mixer connected to the gas inlet of the reaction chamber for the infeed of reaction and scavenging gases, a polyhedral support made...     

A semiconductor wafer processing apparatus has a processing housing including a pair of coaxial hollow cylindrical members each defining an inner cylindrical chamber for directing a treatment medium toward a wafer and an annular chamber for withdrawing the treatment medium. A wafer support which can...     

A cage boat having easily replaceable parts utilizes removable spacer rails for holding semiconductor wafers contained within a cage formed from slats removably attached to end pieces perpendicular to the slats.

A processing apparatus includes a processing chamber and an insertion jig for inserting an object to be processed into the processing chamber. The processing chamber and the insertion jig are adapted to be individually movable relative to a heating section, so that the operation of loading and unloading...     

A system and method whereby the uniformity of the silylating agent throughout the reaction chamber and primarily at the surface of the wafer is significantly improved to provide a significant improvement in the line width uniformity. In accordance with a first embodiment of the invention, this is accomplished...     

A workpiece support for supporting a disc-shaped workpiece in a vacuum chamber, comprises a support member with a support surface for carrying the workpiece. A plurality of bores extend from the support surface and through the support member. The bores communicate with a distribution chamber defined...     

An apparatus for preventing edge and backside coating during CVD processing supports a wafer on flexible supports within a purge cavity in a pedestal such that a movable clamp ring deforms the supports, forms a slot with the frontside of the wafer around the periphery of the wafer and by contacting the...     

For forming a metal film of a desired property on a substrate, a target and the substrate are placed in a pressure-reducing chamber, and then pulse laser is irradiated to the target. This causes the component materials, such as ions, electrons, neutral atoms, cluster, fine grains and liquid drops, of...     

A process and apparatus for producing semiconductor integrated circuit devices wherein the dry processing and the wet processing are continuously effected for the wafers to be processed, and the wafers are transferred between these processings under a vacuum condition or in a purging gas without being...     

The present invention is a heat pipe susceptor for use in a vapor deposition system. The multi-layered refractory material susceptor provides a highly uniform heated surface upon which wafers are placed for heating by a radio frequency (RF) source. Because of the highly uniform surface temperature, susceptors...     

A wafer transfer system consisting of automatic robot claws and a susceptor having circularly bounded and round-bottomed concavities for receiving wafers, wherein the concavities of the susceptor are each provided with at least three trenches made across the circumference of each concavity and arranged...     

A vacuum coating apparatus for coating films on the surfaces of objects to be deposited under vacuum is provided with a vacuum deposition chamber, a carrier accommodated in the vacuum deposition chamber for carrying the objects, a rotary mechanism extending through the vacuum deposition chamber and being...     

The susceptor according to the present invention comprises a main body in the shape of a trapezoidal plate, and which has three circular depressions formed in its surface. The main body is made of silicon carbide having a bulk density of 3.00 g/cm.sup.3 or more. At least 70% of the surface region of...